Quartz crucible use process for meeting pulling of multiple single crystals

A quartz crucible and single crystal technology, which is applied in the direction of single crystal growth, single crystal growth, polycrystalline material growth, etc., can solve the problems of damage to the transparent layer of the quartz crucible, difficulty in crystallization of silicon single crystals, and quartz shedding.

Inactive Publication Date: 2019-12-20
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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  • Description
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  • Application Information

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Problems solved by technology

[0002] The existing quartz crucibles for silicon single crystals generally can only pull 2-3 single crystals, which cannot meet the requirements for continued use of single crystals
[0003] Due to the high chemical activity of silicon in the molten state, it will react with the quartz crucible, that is, SiO2+Si→2SiO, which will cause irreversible damage to the transparent layer of the quartz crucible and affect the service life of t

Method used

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  • Quartz crucible use process for meeting pulling of multiple single crystals
  • Quartz crucible use process for meeting pulling of multiple single crystals
  • Quartz crucible use process for meeting pulling of multiple single crystals

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Embodiment Construction

[0028] The present invention will be further described below in conjunction with specific examples.

[0029] This embodiment relates to a process for using a quartz crucible capable of pulling multiple single crystals. It is applied to the process of re-investment of Czochralski single crystals, and aluminum hydroxide is added. According to the fact that aluminum hydroxide can be decomposed into trioxide at high temperature The characteristics of dialuminum can be made into a nucleating agent. Under the action of the nucleating agent, the α-cristobalite that is detached from the inner wall of the quartz crucible during the Czochralski single crystal process is supplemented, and the density of the contact part between the inner wall of the quartz crucible and the silicon solution is increased. Improve the corrosion resistance of the crucible, increase the service life of the quartz crucible, and then increase the number of single crystals drawn by a single furnace of the quartz ...

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Abstract

The invention provides a quartz crucible use process for meeting pulling of multiple single crystals. In a section refeeding process of pulling of single crystals, a certain amount of aluminum hydroxide is added; and in addition, along with increase of the number of pulled single crystals, the aluminum hydroxide is replenished to replenish dropped crystal evolution layers, and a quartz crucible istransformed into a stable alpha-cristobalite structure. The process has the beneficial effects that due to addition of the aluminum hydroxide, transformation of the quartz crucible to the stable alpha-cristobalite structure is accelerated, the dropped crystal evolution layers can be replenished, corrosion of a silicon solution to the quartz crucible can be reduced, the service life of the quartzcrucible can be prolonged, and cost reduction and effect improvement can be achieved.

Description

technical field [0001] The invention belongs to the field of photovoltaic technology, and in particular relates to a process for using a quartz crucible capable of pulling multiple single crystals. Background technique [0002] The existing quartz crucibles for silicon single crystals generally can only pull 2-3 single crystals, which cannot meet the requirements for continued use of the single crystals. [0003] Due to the high chemical activity of silicon in the molten state, it will react with the quartz crucible, that is, SiO2+Si→2SiO, which will cause irreversible damage to the transparent layer of the quartz crucible and affect the service life of the quartz crucible. [0004] In the prior art, barium carbonate aqueous solution is sprayed on the inner wall of the crucible to speed up the crystallization of the crucible. The crystallization of the crucible is serious in the later stage of operation of this method, and the cristobalite on the inner wall will fall off, ma...

Claims

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Application Information

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IPC IPC(8): C30B15/10C30B15/20C30B29/06
CPCC30B15/10C30B15/20C30B29/06
Inventor 赵国伟徐强高润飞王林谷守伟王建平周泽杨志吴树飞刘振宇王鑫刘学皇甫亚楠杨瑞峰郭志荣
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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