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Multilayer composite substrate structure and manufacturing method thereof

A multi-layer composite and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as high cost and difficult implementation, and achieve thinning processing costs, material cost savings, and good device heat dissipation effect of effect

Inactive Publication Date: 2019-12-20
方天琦
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] In view of this, the present invention provides a detachable multi-layer composite semiconductor substrate structure and its preparation method to solve the problems of difficult implementation and high cost in the prior art

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  • Multilayer composite substrate structure and manufacturing method thereof
  • Multilayer composite substrate structure and manufacturing method thereof
  • Multilayer composite substrate structure and manufacturing method thereof

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Embodiment Construction

[0045] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings. The specific embodiments and drawings are only used to better understand the content of the present invention, but not to limit the protection scope of the present invention. The components in the structures in the drawings of the embodiments are not scaled according to the normal scale, so they do not represent the actual relative sizes of the structures in the embodiments.

[0046] Such as figure 1 As shown, the detachable multilayer composite semiconductor substrate structure provided by the present invention includes an epitaxial layer 104, an epitaxial seed layer 103, a bonding interface layer 102, a disassembly functional layer 101 and a supporting substrate 100, wherein : the disassembly functional layer 102 is form...

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Abstract

The invention discloses a detachable multilayer composite semiconductor substrate structure and a manufacturing method thereof. The structure comprises an epitaxial layer, an epitaxial seed layer, a bonding interface layer, a detachable functional layer, and a support substrate layer, wherein the detachable functional layer can be realized through spin coating or depositing and has functions of dismantling and buffering strain, and the epitaxial seed layer goes to the detachable functional layer through a method of bonding and transferring and can be used as an epitaxy on the epitaxial seed layer. The detachable multilayer composite semiconductor substrate can experience an epitaxial process at 600-1700DEG C. The detachable multilayer composite semiconductor substrate can prevent costly substrate from thinning or removed through the detachable functional layer, and a thin film structure containing an epitaxy is acquired easily and efficiently. After dismantling, the epitaxial seed layer can be remove at low cost, so that a pure epitaxy thin film structure is realized at low cost.

Description

technical field [0001] The invention relates to the technical fields of semiconductor technology and semiconductor packaging, in particular to a multilayer composite semiconductor substrate structure and a preparation method thereof. Background technique [0002] At present, high-power and high-frequency electronic devices have great prospects in 5G communication applications, but the heat dissipation of high-power and high-frequency devices severely limits the reliability and service life of devices. One of the methods to solve the heat dissipation problem of the above-mentioned devices is to integrate the above-mentioned devices with materials with high thermal conductivity after peeling off the original substrate or thinning the original substrate. At present, the methods for removing or thinning the original substrate mainly include mechanical grinding, plasma etching or chemical etching of the nucleation layer. [0003] (1) The mechanical grinding method has a long pro...

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Application Information

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IPC IPC(8): H01L23/14H01L21/683
CPCH01L21/6835H01L23/14H01L2221/6835
Inventor 方天琦
Owner 方天琦
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