Unlock instant, AI-driven research and patent intelligence for your innovation.

Capacitor structure and method of forming it

A capacitor structure and dielectric material technology, applied in capacitors, electric solid devices, instruments, etc., to achieve the effect of preventing electrical interference, preventing electrical failures, and meeting scaling requirements

Active Publication Date: 2021-03-23
YANGTZE MEMORY TECH CO LTD
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

also

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor structure and method of forming it
  • Capacitor structure and method of forming it
  • Capacitor structure and method of forming it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The following disclosure provides many different embodiments, or examples, for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not meant to be limiting. For example, forming a first feature on or over a second feature appearing in the description below may include embodiments in which the first and second features are features that are formed in direct contact, and may also include embodiments in which the first feature and the second feature are formed in direct contact. An embodiment in which an additional feature is formed between the first feature and the second feature so that the first feature and the second feature may not be in direct contact. Furthermore, the present disclosure may reuse reference numerals and / or letters in various examples. This repetition is for the purposes of simplicity and cl...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A capacitor is provided. The capacitor includes a substrate having opposing first and second major surfaces. The capacitor also includes at least two conductive plates formed in the substrate and extending from the first major surface to the second major surface of the substrate. The capacitor also includes at least one insulating structure formed between two adjacent ones of the at least two conductive plates and extending from the first major surface to the second major surface.

Description

Background technique [0001] Capacitors are widely used in integrated circuits. Capacitors store and release electrical energy and are used in integrated circuits as voltage boosters and power stabilizers. In current three-dimensional (3D)-NAND technology, a plurality of capacitors can be applied to act as a booster, thereby providing a high voltage during operation of the 3D-NAND memory cell. [0002] A capacitor structure in deep submicron CMOS can be constructed from two flat parallel plates separated by a thin dielectric layer. The plates are formed from layers of conductive material such as metal or polysilicon. The capacitor structure is typically isolated from the substrate by an underlying dielectric layer. In order to achieve high capacitance density in these structures, additional chip area is required to introduce additional boards. The critical dimensions of 3D-NAND devices in integrated circuits shrink to achieve higher storage capacities, while capacitor struc...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L27/08H01L21/762H10B12/00
CPCH01L28/40H01L28/60H01L27/0805H01L21/76224G11C5/145G11C11/24G11C11/404H10B12/395
Inventor 陈亮甘程吴昕刘威
Owner YANGTZE MEMORY TECH CO LTD