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Film forming material for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method

A lithography and compound technology, applied in photosensitive material processing, microlithography exposure equipment, photosensitive materials for optomechanical equipment, etc., can solve problems such as difficulty in obtaining, collapse of resist pattern, resolution problem

Pending Publication Date: 2019-12-31
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the miniaturization of the resist pattern progresses, there will be a problem of resolution and a problem of collapse of the resist pattern after development, so the thinning of the resist is expected.
However, it is difficult to obtain a sufficient film thickness of the resist pattern in substrate processing only by thinning the resist

Method used

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  • Film forming material for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method
  • Film forming material for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method
  • Film forming material for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0435] As the bismaleimide compound, 10 parts by mass of N,N'-biphenyl bismaleimide (BMI-70; manufactured by K.I Chemical Industry Co., Ltd.) represented by the following formula was used alone, A film-forming material for photolithography was prepared.

[0436]

[0437] As a result of thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). Moreover, when the solubility in PGMEA was evaluated, it was 5 mass % or more and less than 10 mass % (evaluation B), and it was evaluated that the obtained film formation material for lithography has sufficient solubility.

[0438] A film-forming composition for lithography was prepared by adding 90 parts by mass of PGMEA as a solvent to 10 parts by mass of the aforementioned film-forming material for lithography, and stirring with a stirrer at room temperature for at least 3 hours.

Embodiment 2

[0440] As an addition polymerization-type maleimide resin, 10 parts by mass of a phenylmethane maleimide oligomer (BMI oligomer; BMI-2300, produced by Daiwa Chemical Industry Co., Ltd.) represented by the following formula was used alone, A film-forming material for photolithography was prepared.

[0441]

[0442] As a result of thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, when the solubility in PGMEA was evaluated, it was 10% by mass or more (evaluation A), and it was evaluated that the obtained film-forming material for lithography had excellent solubility.

[0443] A film-forming composition for lithography was prepared by adding 90 parts by mass of PGMEA as a solvent to 10 parts by mass of the aforementioned film-forming material for lithography, and stirring with a stirrer at room temperature for at least 3 hours.

Embodiment 3

[0445] As the addition polymerization type maleimide resin, 10 parts by mass of a biphenyl aralkyl type maleimide resin (MIR-3000-L, manufactured by Nippon Kayaku Co., Ltd.) represented by the following formula was used alone, A film-forming material for photolithography was prepared.

[0446]

[0447] As a result of thermogravimetric measurement, the amount of thermogravimetric decrease at 400° C. of the obtained film-forming material for lithography was less than 10% (evaluation A). In addition, when the solubility in PGMEA was evaluated, it was 10% by mass or more (evaluation A), and it was evaluated that the obtained film-forming material for lithography had excellent solubility.

[0448] A film-forming composition for lithography was prepared by adding 90 parts by mass of PGMEA as a solvent to 10 parts by mass of the film-forming material for lithography, and stirring with a stirrer at room temperature for at least 3 hours.

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Abstract

The present invention provides a film forming material for lithography, which contains a compound having a group of formula (0).

Description

technical field [0001] The present invention relates to a film-forming material for lithography, a film-forming composition for lithography containing the material, an underlayer film for lithography formed using the composition, and a pattern forming method using the composition (such as a resist patterning method or circuit pattern method). Background technique [0002] In the manufacture of semiconductor devices, microfabrication is performed by photolithography using photoresist materials. In recent years, along with higher integration and higher speed of LSIs, further miniaturization based on pattern rules has been sought. Furthermore, in photolithography using light exposure, which is currently used as a general technique, the limit of the intrinsic resolution derived from the wavelength of the light source is getting closer. [0003] The light source for lithography used in resist pattern formation has been shortened from KrF excimer laser (248 nm) to ArF excimer la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08F22/40C08L101/02G03F7/20G03F7/26
CPCC08F22/40C08L101/02G03F7/094G03F7/027G03F7/11G03F7/004G03F7/028G03F7/0045C08F2/50G03F7/20G03F7/26C08F222/402C07D207/452C09D133/24
Inventor 冈田佳奈堀内淳矢牧野岛高史越后雅敏
Owner MITSUBISHI GAS CHEM CO INC
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