Band-gap reference voltage source capable of improving upper limit of power supply voltage fluctuation

Abstract

The invention discloses a band-gap reference voltage source capable of improving an upper limit of power supply voltage fluctuation. The band-gap reference voltage source comprises an MOS transistor M1, an MOS transistor M2, an MOS transistor M3, an MOS transistor M4, an MOS transistor M5, an MOS transistor M6, an MOS transistor M7, an MOS transistor M8, an MOS transistor M9, an MOS transistor M10, an MOS transistor M11, an MOS transistor M12, an MOS transistor M13, an MOS transistor M14, a triode Q1, a triode Q2, a triode Q3, a triode Q4, a triode Q5, a resistor R1 and a resistor R2. A three-stage cascode current mirror technology is adopted, and furthermore, a gate bias supply method is improved, so that the power supply voltage range supported by a band-gap reference circuit is expandedto the maximum extent, the service life of the circuit is greatly prolonged, the service environment of the circuit is expanded and the circuit can be flexibly integrated into various integrated circuit chips.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit design, and in particular relates to a bandgap reference voltage source for increasing the fluctuation upper limit of a power supply voltage. Background technique [0002] Bandgap reference circuits are widely used in analog circuits, digital circuits, and digital-analog hybrid circuits. The power supply voltage range that enables the bandgap reference voltage source to work normally has a crucial impact on the performance and service life of the entire system. [0003] The usual bandgap reference voltage consists of two parts: PTAT voltage (Proportional to Absolute Temperature Voltage) and CTAT voltage (Complementary to Absolute Temperature Voltage), such as figure 1 shown. The CTAT voltage can be obtained through the BJT tube, and the PTAT voltage can be achieved by biasing the difference between the two VBEs of the BJT tube at different current densities. The BJT tube △VBE relation...

AI Technical Summary

Problems solved by technology

For this reason, the main purpose of the present invention is to provide a pulse modulation circuit with a high-frequency limiting function, which aims to solve the problem that the upper limit of the power supply voltage fluctuation range of the traditional one-stage cascode current mirror structure is limited and cannot be made very large thus limiting the problem of its entire fluctuation range

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