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IGBT chip and semiconductor power module

A technology of power modules and semiconductors, applied in the direction of semiconductor devices, single semiconductor device testing, instruments, etc., can solve the problems of unstable current ratio relationship between the current detection area and the main working area, low current detection accuracy and sensitivity, etc.

Pending Publication Date: 2020-01-03
JILIN SINO MICROELECTRONICS CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the current sensor integrated in the IGBT chip is used to realize the current test and monitoring of the devices in the semiconductor power module. The above-mentioned current sensor is usually integrated in the IGBT chip using the Kelvin (Kelvin) connection method. Due to this test method The current proportional relationship between the current detection area and the main working area is unstable, resulting in the problem of low current detection accuracy and sensitivity

Method used

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  • IGBT chip and semiconductor power module
  • IGBT chip and semiconductor power module
  • IGBT chip and semiconductor power module

Examples

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Embodiment 1

[0037] An embodiment of the present invention provides an IGBT chip, the IGBT chip includes: a main working area, a current detection area and a grounding area; for easy understanding, as Figure 4 A schematic diagram of the structure of an IGBT chip shown, such as Figure 4 As shown, the first surface of the IGBT chip is provided with a first gate electrode unit 101 and a first emitter unit 102 in the main working area, a second gate electrode unit 103 and a second emitter unit 104 in the current detection area, and, The electrodes are spaced apart by etching the metallization layer on the surface of the IGBT chip; the second surface of the IGBT chip ( Figure 4 Not shown in ), the first collector unit of the main working area and the second collector unit of the current detection area are arranged, and the first collector unit and the second collector unit overlap; wherein, the second surface and the second collector unit One surface is the two opposite surfaces on the IGBT...

Embodiment 2

[0048] On the basis of the above embodiments, this embodiment also provides a semiconductor power module, such as Figure 7 A schematic structural diagram of a semiconductor power module is shown, the semiconductor power module 700 is configured with the above-mentioned IGBT chip 701, and also includes a first driver integrated block 702 and a second driver integrated block 703; wherein, the first driver integrated block 702 and The second gate electrode unit 103 of the current detection area in the IGBT chip is connected to drive the current detection area to work; the second driver integrated block 703 is connected to the first gate electrode unit 101 of the main working area in the IGBT chip for driving The main work area works.

[0049] In specific implementation, the semiconductor power module also includes a test sampling resistor; the second driver integrated block is also connected to the test sampling resistor for obtaining the voltage on the test sampling resistor. ...

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Abstract

The invention provides an IGBT chip and a semiconductor power module, and relates to the technical field of semiconductor devices. A first gate electrode unit and a first emitter unit of a main working area and a second gate electrode unit and a second emitter unit of a current detection area are arranged on the first surface of the IGBT chip, a first collector unit of the main working area and asecond collector unit of the current detection area are arranged on the second surface of the IGBT chip, and a grounding area is arranged at any position in the first emitter unit; and the current detection area and the grounding area are used for being connected with two ends of a test sampling resistor to make a voltage generated on the test sampling resistor in order to detect the working current of the main working area. The gate electrode unit of the main working area is not connected with the gate electrode unit of the current detection area, so the current proportional relation betweenthe current detection area and the main working area in the current measurement process is stable, and the current detection precision and the test sensitivity are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an IGBT chip and a semiconductor power module. Background technique [0002] Semiconductor power modules are widely used in chopper or inverter circuits. Generally, semiconductor power modules mainly include controllable switching devices and freewheeling devices such as IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) chips. In order to ensure that the semiconductor power module can work safely and reliably, real-time testing and monitoring of the current of devices in the semiconductor power module is usually performed to facilitate circuit protection. [0003] At present, the current sensor integrated in the IGBT chip is used to realize the current test and monitoring of the devices in the semiconductor power module. The above-mentioned current sensor is usually integrated in the IGBT chip using the Kelvin (Kelvin) connection method. Du...

Claims

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Application Information

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IPC IPC(8): H01L29/739G01R19/00G01R31/26
CPCH01L29/7395H01L29/7397G01R31/2601G01R19/0092
Inventor 左义忠
Owner JILIN SINO MICROELECTRONICS CO LTD
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