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Manufacturing method of patterned substrate, patterned substrate and light emitting diode

A patterned substrate and manufacturing method technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of long modification time, low production capacity, and unsatisfactory production, so as to shorten the process time, The effect of increasing productivity

Active Publication Date: 2020-01-03
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Obviously, the PSS patterned substrate manufacturing method in the related art takes too long to modify the shape, resulting in a long process time for the patterned substrate and low production capacity, which cannot meet the production needs

Method used

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  • Manufacturing method of patterned substrate, patterned substrate and light emitting diode
  • Manufacturing method of patterned substrate, patterned substrate and light emitting diode
  • Manufacturing method of patterned substrate, patterned substrate and light emitting diode

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Embodiment Construction

[0030] The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are only used to illustrate and explain the present invention, and not to limit the present invention.

[0031] Such as figure 1 As shown, the first aspect of the present invention relates to a manufacturing method of a patterned substrate, including:

[0032] Initial stage: forming a patterned mask with initial topography on the substrate.

[0033] Specifically, in this step, a patterned mask with an initial topography is formed, for example, figure 1 As shown in the pattern A in the figure, a layer of photoresist can be formed on the substrate 1, and the photoresist can be exposed and developed to finally form a patterned mask 2 with an initial topography, such as figure 1 As shown in the figure A, the longitudinal section of the initial topography of the patterned mask 2 is rec...

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PUM

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Abstract

The invention discloses a manufacturing method of a patterned substrate, the patterned substrate and a light emitting diode. The method comprises an initial stage, namely, forming a patterned mask with an initial morphology on a substrate; a morphology forming stage, namely, introducing a first etching gas, and forming a patterned mask with a predetermined morphology and a preliminary patterned substrate under preset first etching process parameters; a corner forming inhibition stage, namely, introducing a second etching gas, and inhibiting the formation of corners of the patterned mask with the predetermined morphology under preset second etching process parameters to obtain an intermediate patterned substrate; and a morphology modification stage, namely, introducing a third etching gas,and modifying the morphology of the side wall of the intermediate patterned substrate under preset third etching process parameters to obtain the final patterned substrate. According to the manufacturing method of the patterned substrate, the process time can be effectively shortened, and the productivity is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a manufacturing method of a patterned substrate, a patterned substrate and a light emitting diode. Background technique [0002] PSS (Patterned Sapphire Substrates), or patterned substrate technology, is a commonly used method to improve the light efficiency of GaN-based LED devices. This method can effectively reduce the dislocation density of the GaN epitaxial material, thereby reducing the non-radiative recombination of the active area, reducing the reverse leakage current, and improving the life of the LED. The light emitted from the active area is scattered through the interface of the GaN and sapphire substrate multiple times, changing the exit angle of the total reflection light, increasing the probability of the LED light emitting from the front (front mounted) and back (flip mounted), thereby increasing Light extraction efficiency. At the same time, the ...

Claims

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Application Information

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IPC IPC(8): H01L33/20H01L33/00H01L21/3065
CPCH01L21/3065H01L33/0075H01L33/20
Inventor 高明圆
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD