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Offset type semiconductor thermoelectric module adopting hexahedral thermoelectric arms

A technology of thermoelectric module and thermoelectric arm, which is applied in the direction of thermoelectric devices that only use the Peltier or Seebeck effect, can solve the problems of increased electrode loss and increased resistance, and achieve the effect of reducing consumption, reducing impact, and high power generation efficiency

Active Publication Date: 2020-01-03
NORTHEASTERN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As the current density on the surface of the conductive electrode is greater, the actual current flowing inside the electrode will be lower, which will lead to an increase in the resistance of the conductor and an increase in electrode loss

Method used

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  • Offset type semiconductor thermoelectric module adopting hexahedral thermoelectric arms
  • Offset type semiconductor thermoelectric module adopting hexahedral thermoelectric arms
  • Offset type semiconductor thermoelectric module adopting hexahedral thermoelectric arms

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Embodiment Construction

[0023] The following is attached Figure 1-9 The embodiments of the present invention are further described in detail.

[0024] Through the analysis of the internal current distribution of the thermoelectric arm in the thermoelectric module, it is proved that the thermoelectric arm with the offset hexahedron structure has better thermoelectric performance than the ordinary parallelepiped thermoelectric arm, so based on the above two points, the present invention proposes the use of the offset hexahedron Structural thermoelectric modules.

[0025] The present invention is an offset semiconductor thermoelectric module adopting a hexahedral structure thermoelectric arm, comprising two hexahedral semiconductor thermoelectric arms 2, a copper conductive sheet a1 and a copper conductive sheet b3, wherein the two hexahedral semiconductor thermoelectric arms 2 are symmetrical by The parallel connection is arranged between the two copper conductive sheets a1 and the copper conductive ...

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Abstract

The invention relates to an offset type semiconductor thermoelectric module adopting hexahedral thermoelectric arms. The offset type semiconductor thermoelectric module comprises two hexahedral semiconductor thermoelectric arms, copper conducting strips and insulating layers. The two hexahedral semiconductor thermoelectric arms are symmetrically arranged between the two copper conducting strips inparallel, and the insulating layers are arranged on the outer sides of the two copper conducting strips. The two hexahedral semiconductor thermoelectric arms are obtained by offsetting the vertexes of regular hexahedral thermoelectric arms at a certain angle and radius. The offset type hexahedral thermoelectric arm can be applied to modules of thermoelectric power generation systems of various structures, such as a cylindrical two-stage structure and a multilayer plate type structure. The offset structure can enable the whole system to have higher thermoelectric conversion efficiency, higherthermoelectric power generation efficiency and better heat transfer characteristics.

Description

technical field [0001] The invention belongs to the technical field of semiconductor thermoelectric modules, in particular to an offset semiconductor thermoelectric module adopting hexahedral thermoelectric arms. Background technique [0002] At present, the Π-type thermoelectric module is the most common module form, but in some thermoelectric power generation systems with common structures, such as cylindrical two-stage structure, multi-layer plate structure, etc., the use of offset structure thermoelectric modules can make the whole system have Higher thermoelectric conversion efficiency, thermoelectric power generation efficiency and better heat transfer characteristics. [0003] The current density distribution in the traditional hexahedral thermoelectric module is different. The current density on the thermoelectric arm is small and the distribution is uniform, but the current density inside the conductive electrode is large and the distribution difference is obvious. ...

Claims

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Application Information

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IPC IPC(8): H01L35/32
CPCH10N10/17
Inventor 孟祥宁周森苗壮朱苗勇
Owner NORTHEASTERN UNIV
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