Semiconductor devices having recess in encapsulation material and associated production methods
A technology of encapsulating materials and semiconductors, which is applied in the field of semiconductor technology and can solve problems such as signal loss and power loss
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example 1
[0126] Example 1 is a method comprising: providing at least one semiconductor component, wherein each semiconductor component of the at least one semiconductor component comprises: a semiconductor chip, wherein the semiconductor chip has a first major surface and a The second main surface, and the sacrificial material arranged on the opposite second main surface of the semiconductor chip; encapsulating at least one semiconductor component with encapsulation material; removing the sacrificial material, wherein each semiconductor chip in the at least one semiconductor chip forming over a recess in the encapsulation material; and disposing at least one cover over the at least one recess, wherein a closed cavity is formed above each of the at least one semiconductor chip by the at least one recess and the at least one cover.
example 2
[0127] Example 2 is the method according to example 1, wherein the cavity is arranged above the opposite main surface of the respective semiconductor chip, wherein in an orthogonal projection onto the opposite main surface, the base surface of the sacrificial material and the The base area projects at least partially beyond the base area of the semiconductor chip.
example 3
[0128] Example 3 is the method according to examples 1 or 2, wherein providing the at least one semiconductor component includes arranging an etch stop layer between the at least one semiconductor chip and the sacrificial material, and wherein removing the sacrificial material includes etching the sacrificial material, wherein the etch stop layer is exposed .
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Abstract
Description
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