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Low temperature storage unit and storage device

A storage unit and device technology, applied in static memory, digital memory information, electrical components, etc., can solve the problems of RSFQ signal incompatibility, small storage capacity, low writing speed, etc., to achieve large-capacity storage, small size, The effect of increasing the writing speed

Active Publication Date: 2021-05-11
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a low-temperature storage unit and a storage device, which are used to solve the problems of small storage capacity, low writing speed, high energy consumption and problems with the storage device in the prior art. RSFQ signal incompatibility and other issues

Method used

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  • Low temperature storage unit and storage device

Examples

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Effect test

Embodiment 1

[0042] see figure 1 , the present invention provides a low-temperature storage unit 1, the low-temperature storage unit 1 includes: a spin torque transfer device 11, the spin torque transfer device 11 includes an input terminal and a ground terminal, the spin torque transfer device 11 The input terminal is used to input the write current I write ; The spin torque transfer device 11 will write the current I write converted into a spin-polarized current, and change the magnetic polarization direction under the action of the spin-polarized current, so as to realize the write storage of 0 and 1; nano-superconducting quantum interference device (nano-SQUID) 12, the The nano-superconducting quantum interference device includes an input and output terminal and a ground terminal, and the input and output terminals of the nano-superconducting quantum interference device 12 are used for inputting the read current I read and output the readout signal V out , the ground terminal of the...

Embodiment 2

[0046] Please combine Figure 1 to Figure 2 refer to image 3 , the present invention also provides a low-temperature storage unit 1, the low-temperature storage unit 1 includes: a spin torque transfer device 11, the spin torque transfer device 11 includes an input terminal WY and a ground terminal, the spin torque transfer device The input terminal WY of 11 is used as the first input terminal of the low-temperature storage unit 1, and the spin torque transfer device 11 is used to input the first write current I write_Y ; The nano-superconducting quantum interference device 12, the nano-superconducting quantum interference device 12 includes an input and output terminal RY and a ground terminal, and the input and output terminal RY of the nano-superconducting quantum interference device 12 is used as the input of the low-temperature storage unit 1 output terminal, the input and output terminal RY of the nano-superconducting quantum interference device 12 is used to input the ...

Embodiment 3

[0052] Please combine image 3 refer to Figure 4 , the present invention also provides a storage device, which includes: several low-temperature storage units 1 as described in Embodiment 2, and several low-temperature storage units 1 are arranged at intervals in multiple rows and columns; data writing into the RSFQ control circuit 2, the data is written into the RSFQ control circuit 2 and the first input terminals WY of each of the low-temperature storage units 1 located in the same column are sequentially connected in series; the address compiling RSFQ control circuit 3, the address compiling RSFQ control The circuit 3 sequentially connects the second input terminals X of the low-temperature storage units 1 located in the same row; the data readout RSFQ control circuit 4, and the data readout RSFQ control circuit 4 connects the low-temperature storage units 1 located in the same column. The input and output terminals RY of the storage units 1 are sequentially connected in ...

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Abstract

The invention provides a low-temperature storage unit and a storage device. The low-temperature storage unit includes: a spin torque transfer device, which converts a write current into a spin polarization current, and changes the current under the action of the spin polarization current. The magnetic polarization direction is used to realize the write storage of 0 and 1; the nano-superconducting quantum interference device, the ground terminal of the nano-superconducting quantum interference device is connected to the ground terminal of the spin torque transfer device; the nano-superconducting quantum interference device is in The magnetic flux changes under the action of the change of the magnetic polarization direction of the spin torque transfer device, so that the mutual transition between the superconducting state and the non-superconducting state is realized under the bias of the read current signal, and the readout of 0 and 1 is realized. The low-temperature storage unit of the present invention can greatly reduce the resistance of the spin torque transfer device, thereby reducing the power consumption of storage and writing of the low-temperature storage unit, and the readout signal can be fully compatible with the RSFQ circuit signal.

Description

technical field [0001] The invention belongs to the technical field of superconducting electronic information, and relates to a low-temperature storage unit and a storage device. Background technique [0002] In recent years, with the gradual failure of Moore's Law, the development of computers has entered a bottleneck stage, and the clock frequency of a single-core central processing unit (CPU) has stagnated at around 4GHz, making it difficult to continue to improve. At the same time, with the development of supercomputers, large-scale calculations consume more and more power, and energy consumption has gradually become a significant problem in the further development of computers. The digital circuit RSFQ (Rapid single flux quantum) based on superconducting materials uses a single magnetic flux voltage pulse with a pulse width of picosecond level as the "0" and "1" signals, and takes the Josephson junction (JJ) as the basic element. The overall power consumption of the R...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16H01L49/00
CPCG11C11/161H10N99/05G11C11/1675G11C11/1673G11C11/44H03K19/1952
Inventor 陈垒曾俊文王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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