Low temperature storage unit and storage device
A storage unit and device technology, applied in static memory, digital memory information, electrical components, etc., can solve the problems of RSFQ signal incompatibility, small storage capacity, low writing speed, etc., to achieve large-capacity storage, small size, The effect of increasing the writing speed
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Embodiment 1
[0042] see figure 1 , the present invention provides a low-temperature storage unit 1, the low-temperature storage unit 1 includes: a spin torque transfer device 11, the spin torque transfer device 11 includes an input terminal and a ground terminal, the spin torque transfer device 11 The input terminal is used to input the write current I write ; The spin torque transfer device 11 will write the current I write converted into a spin-polarized current, and change the magnetic polarization direction under the action of the spin-polarized current, so as to realize the write storage of 0 and 1; nano-superconducting quantum interference device (nano-SQUID) 12, the The nano-superconducting quantum interference device includes an input and output terminal and a ground terminal, and the input and output terminals of the nano-superconducting quantum interference device 12 are used for inputting the read current I read and output the readout signal V out , the ground terminal of the...
Embodiment 2
[0046] Please combine Figure 1 to Figure 2 refer to image 3 , the present invention also provides a low-temperature storage unit 1, the low-temperature storage unit 1 includes: a spin torque transfer device 11, the spin torque transfer device 11 includes an input terminal WY and a ground terminal, the spin torque transfer device The input terminal WY of 11 is used as the first input terminal of the low-temperature storage unit 1, and the spin torque transfer device 11 is used to input the first write current I write_Y ; The nano-superconducting quantum interference device 12, the nano-superconducting quantum interference device 12 includes an input and output terminal RY and a ground terminal, and the input and output terminal RY of the nano-superconducting quantum interference device 12 is used as the input of the low-temperature storage unit 1 output terminal, the input and output terminal RY of the nano-superconducting quantum interference device 12 is used to input the ...
Embodiment 3
[0052] Please combine image 3 refer to Figure 4 , the present invention also provides a storage device, which includes: several low-temperature storage units 1 as described in Embodiment 2, and several low-temperature storage units 1 are arranged at intervals in multiple rows and columns; data writing into the RSFQ control circuit 2, the data is written into the RSFQ control circuit 2 and the first input terminals WY of each of the low-temperature storage units 1 located in the same column are sequentially connected in series; the address compiling RSFQ control circuit 3, the address compiling RSFQ control The circuit 3 sequentially connects the second input terminals X of the low-temperature storage units 1 located in the same row; the data readout RSFQ control circuit 4, and the data readout RSFQ control circuit 4 connects the low-temperature storage units 1 located in the same column. The input and output terminals RY of the storage units 1 are sequentially connected in ...
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