Bias voltage control method and device and semiconductor processing equipment

Abstract

The invention provides a bias voltage control method and device and semiconductor processing equipment. The method comprises the steps of collecting an analog signal of radio frequency bias voltage ona lower electrode in real time; converting the analog signal of the radio frequency bias into a digital signal; processing the digital signal to obtain an amplitude detection value and a phase detection value of the radio frequency bias voltage; comparing the amplitude detection value and the phase detection value with a preset amplitude set value and a preset phase set value respectively, and respectively controlling the power output value and the phase output value of a bias power supply electrically connected with the lower electrode according to respective comparison results. According tothe technical scheme of the bias voltage control method and device and the semiconductor processing equipment provided by the invention, the accuracy of controlling the output power of the bias powersupply can be improved, and the ion energy above a wafer can be more accurately controlled, so that the consistency of process results can be further ensured.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a bias control method and device, and semiconductor processing equipment. Background technique [0002] With the rapid development of the manufacturing process of semiconductor components, the requirements for the performance and integration of the components are getting higher and higher, which makes the plasma technology widely used. In the plasma etching or deposition system, by introducing various reaction gases (such as Cl 2 ,SF 6 ,C 4 F 8 ,O 2 Etc.), using an external electromagnetic field (DC or AC) to excite the reaction gas to form a plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles have various physical and chemical reactions with the wafer surface to complete etching or other processes. [0003] As the feature size of integrated circuits continues to decrease,...

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Problems solved by technology

[0004] In the actual control process, there are still differences in etching results caused by differences in uncontrollable distribution parameters such as the wiring form of the lower electrode, especially for the application of process nodes below 14nm, this difference is further amplified

At the same time, the current method of monitoring the RF bias value on the lower electrode is to detect the amplitude of the RF voltage at the input end of the lower matching device. However, affected by the distribution parameters of the lower electrode, the input end of the lower matching device The RF bias value detected at can not directly reflect the voltage above the wafer, and has limited guidance on chamber consistency

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