Bias voltage control method and device, semiconductor processing equipment

Abstract

The invention provides a bias voltage control method and device, and semiconductor processing equipment. The method includes: collecting an analog signal of a radio frequency bias voltage on a lower electrode in real time; converting the analog signal of a radio frequency bias voltage into a digital signal; and processing the digital signal , to obtain the amplitude detection value and phase detection value of the radio frequency bias; compare the amplitude detection value and phase detection value with the preset amplitude setting value and phase setting value respectively, and respectively Controlling the power output value and phase output value of the bias power supply electrically connected to the lower electrode, the bias voltage control method and device provided by the present invention, and the technical scheme of semiconductor processing equipment can improve the efficiency of controlling the output power of the bias power supply. Accuracy, and more precise control of the ion energy above the wafer, which can further ensure the consistency of process results.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a bias voltage control method and device, and semiconductor processing equipment. Background technique [0002] With the rapid development of the manufacturing process of semiconductor components, the requirements for the performance and integration of components are getting higher and higher, which makes plasma technology widely used. In the plasma etching or deposition system, by introducing various reactive gases (such as Cl 2 ,SF 6 ,C 4 f 8 ,O 2 etc.), using an external electromagnetic field (DC or AC) to excite the reactive gas to form a plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, and free radicals. These active particles undergo various physical and chemical reactions with the wafer surface to complete etching or other processes. [0003] As the feature size of integrated circuits continu...

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Problems solved by technology

[0004] In the actual control process, there are still differences in etching results caused by differences in uncontrollable distribution parameters such as the wiring form of the lower electrode, especially for the application of process nodes below 14nm, this difference is further amplified

At the same time, the current method of monitoring the RF bias value on the lower electrode is to detect the amplitude of the RF voltage at the input end of the lower matching device. However, affected by the distribution parameters of the lower electrode, the input end of the lower matching device The RF bias value detected at can not directly reflect the voltage above the wafer, and has limited guidance on chamber consistency

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