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Millimeter wave attenuator of substrate integrated waveguide

A substrate-integrated waveguide and millimeter-wave technology, applied in waveguide devices, electrical components, circuits, etc.

Active Publication Date: 2020-02-04
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is worth noting that the SIW attenuator used in the millimeter wave frequency band has not been reported yet, and the present invention proposes a millimeter wave attenuator based on SIW

Method used

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  • Millimeter wave attenuator of substrate integrated waveguide
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  • Millimeter wave attenuator of substrate integrated waveguide

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Embodiment Construction

[0027] The present invention will be further described in detail below in conjunction with the accompanying drawings and examples.

[0028] Since the EM field distribution characteristics in SIW and Rectangular Waveguide (RW) are similar, for simplicity, the attenuator in RW is analyzed first. The distribution of the surface resistance of the side wall of the attenuator body is as follows: figure 2 , can be divided into two parts: Area 1 and Area 2.

[0029] The amplitude of the electric field is along the +z direction, and the attenuation constant in RW is assumed to be α, which propagates in the form of waves, which can be expressed as

[0030] E=E 0 e -αz (1)

[0031] The transmission power can be expressed as

[0032] P=P 0 e -2αz (2)

[0033] The power loss per unit length is

[0034]

[0035]

[0036]

[0037]

[0038] where R s , R s ', Js, with Respectively represent the surface resistance of the metal in the RW, the surface resistance in th...

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Abstract

The invention relates to a microwave circuit technology, and particularly relates to a millimeter wave attenuator of a substrate integrated waveguide. An energy consumption element-resistance film isintroduced into an SIW attenuator body in the electromagnetic wave propagation direction, and the loss on a propagation channel is increased. When electromagnetic waves are propagated in the SIW attenuator body in a TE1.0 mode, signals can be attenuated to a certain degree while the TE1.0 mode is propagated. The surface resistance of the side wall part of the SIW attenuator body can be divided into two parts: a first area and a second area. In the first area, the insertion loss difference between high and low frequency points can be increased along with the increase of k. In the second area, the insertion loss difference between high and low frequency points can be reduced along with the increase of k. When the scale factor of k is about 0.6, the attenuation value of RW with surface resistance is constant.

Description

technical field [0001] The invention designs microwave technology, and in particular relates to a millimeter wave attenuator of a substrate integrated waveguide (Substrate Integrated Waveguide, SIW). Background technique [0002] As a new type of transmission structure, Substrate Integrated Waveguide (SIW) has been widely used in microwave and millimeter wave circuits. It has the advantages of low loss, excellent microwave performance, and easy integration. [0003] Attenuators are an essential part of RF, microwave, and mmWave circuits and systems. It is an electronic component that provides attenuation and is widely used in electronic equipment. Its main purpose is: (1) to adjust the size of the signal in the circuit; (2) to improve impedance matching, if some circuits require a comparison When the load impedance is stable, an attenuator can be inserted between this circuit and the actual load impedance to buffer the change of impedance. [0004] In addition, a large num...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/22
CPCH01P1/222
Inventor 彭浩吴源浩赵发举刘宇周翼鸿杨涛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA