Self-adaptive system for adjusting read-write speed of Nand-flash
A technology for reading and writing speed and adjusting the system, applied in the field of memory, can solve problems such as unreasonable processing, large-scale errors, bit errors, etc., to ensure reading and writing speed and correctness, ensure correctness, and ensure read and write efficiency Effect
Active Publication Date: 2020-02-07
TIANJIN JINHANG COMP TECH RES INST
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Problems solved by technology
However, due to structural characteristics and manufacturing process limitations, there are bit errors in the use of Nand-flash. When an error occurs, the data of the entire block or page is generally not invalid, but a single-bit or multiple-bit error occurs in a page.
In addition, the read and write performance of Nand-flash will be affected by environmental factors. As the temperature increases or decreases, the response speed of Nand-flash will slow down after operation. If you still read and write at a higher speed, there may be large scale data error
Single-bit or several-bit data can be corrected by corresponding error correction algorithms, but large-scale errors cannot be handled reasonably
Therefore, under high temperature or low temperature conditions, in order to ensure the correctness of its reading and writing, it is necessary to reduce its corresponding reading and writing speed.
Method used
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Embodiment 1
[0062] Such as figure 1 As shown, the specific implementation of this embodiment is as follows:
[0063] (1) After starting, first read and write the control module to read and write Nand-flash according to the normal speed;
[0064] (2) After reading / writing a page, perform error detection on the corresponding data by the core control module;
[0065] (3) If an error occurs, the current temperature is obtained by the temperature sensing device of the core control module;
[0066] (4) If the temperature does not change, the core control module uses an error correction algorithm to perform single-bit or several-bit error correction;
[0067] (5) If the temperature changes, the reading and writing speed is adjusted by the speed adjustment module. The adjustment rule is that the speed will be reduced by 0.5M / S for every ten degrees of temperature increase or decrease;
[0068] (6) After the speed adjustment is completed, the read-write control module starts to read and write a...
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The invention belongs to the technical field of memories, and particularly relates to aself-adaptive system for adjusting read-write speed of Nand-flash. Compared with the prior art, a Nand-flash read-write amplifier generally adopts a single set rate. The system can adjust the read-write rate according to the external environment, the read-write speed and correctness are guaranteed to the maximumextent. The system is more suitable for application in severe environments with large temperature changes. Therefore, the invention provides the system for dynamically adjusting the read-write speedof the Nand-flash along with the temperature change, so that the correctness of the data can be ensured, and the read-write efficiency can also be ensured to a certain extent.
Description
technical field [0001] The invention belongs to the technical field of memory, and in particular relates to an adaptive Nand Flash reading and writing speed adjustment system. Background technique [0002] Nand-flash memory is a kind of Flash memory, which uses nonlinear macro-cell mode inside, which provides a cheap and effective solution for the realization of solid-state large-capacity memory. Nand-flash memory has the advantages of large capacity and fast rewriting speed, and is suitable for storing large amounts of data, so it has been more and more widely used in civilian and military fields. [0003] In some engineering test projects, in addition to the harsh test environment, the test cost is also extremely high. Therefore, in order to save the test cost, the reliability of the test equipment is strictly required, especially for the integrity and correctness of the test data. Require. Nand-flash has become the best choice for such applications due to its high speed...
Claims
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IPC IPC(8): G06F13/16G06F11/10G06F11/30
CPCG06F13/1668G06F11/1068G06F11/3037G06F11/3058Y02D10/00
Inventor 刘慧婕仇旭东赵斌李岩
Owner TIANJIN JINHANG COMP TECH RES INST