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A kind of array substrate and display device

A technology of array substrates and substrate substrates, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of display resolution and screen-to-body ratio, decreased display space utilization, and multiple spaces, etc., to improve the display effect , improve reliability and stability, and improve space utilization

Active Publication Date: 2022-04-01
XIAMEN TIANMA MICRO ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a setting, although it can ensure that the two transistors can work normally, but it needs to occupy more space, which will reduce the space utilization of the display, and may have a negative impact on the resolution and screen ratio of the display.

Method used

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  • A kind of array substrate and display device
  • A kind of array substrate and display device
  • A kind of array substrate and display device

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Embodiment Construction

[0025] The specific implementation manners of an array substrate and a display device provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0026] An embodiment of the present invention provides an array substrate, such as Figure 1 to Figure 3 As shown, among them, figure 1 is a structural schematic diagram of an array substrate, figure 2 is a structural schematic diagram of another array substrate, image 3 It is a structural schematic diagram of another array substrate.

[0027] see Figure 1 to Figure 3 As shown, the array substrate may includ...

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Abstract

The invention discloses an array substrate and a display device. Since the orthographic projections of the first grid and the second grid on the base substrate overlap, and both the first grid and the second grid are located on the first active layer between the second active layer and the second active layer, so that the orthographic projections of the first transistor and the second transistor on the substrate overlap, rather than the orthogonal projections of the two transistors on the substrate as in the prior art. In this way, the utilization rate of space can be improved, which is conducive to improving the display resolution and realizing the design of high screen-to-body ratio and narrow border, thereby improving the display effect. Moreover, through the above arrangement, a shielding effect is generated between the first gate and the second gate, that is, the first gate can shield the signal on the second gate from interfering with the first active layer, and the second gate The interference of the signal on the first grid to the second active layer can be shielded, so that both transistors can work normally and effectively, and the reliability and stability of the display device are improved.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an array substrate and a display device. Background technique [0002] With the development of technology, the types of displays also increase, including, for example, liquid crystal displays, electroluminescent displays, and the like. Among them, in order to enable the display to realize the display function, it generally includes a driving circuit, which can include multiple transistors; in order to meet different requirements, when setting the active layer of the transistor, silicon-based materials, such as low-temperature polysilicon, or Metal oxide materials such as indium gallium zinc oxide may also be used. [0003] If the driver circuit includes silicon-based transistors and metal oxide transistors, due to the manufacturing process, silicon-based transistors are usually fabricated on the substrate first, and then metal oxide transistors are fabricated, and the two trans...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12
CPCH01L27/1225H01L27/1251
Inventor 赖青俊朱绎桦
Owner XIAMEN TIANMA MICRO ELECTRONICS