Display panel and preparation method thereof

Abstract

The invention provides a display panel and a preparation method thereof. Oxide layers are arranged at the joints of a source-drain metal layer and a first gate layer and a second gate layer, specifically, a first oxide layer is arranged at a position, corresponding to a first through hole, of the first gate layer, and a second oxide layer is arranged at a position, corresponding to a second through hole, of the second gate layer. Or, oxide layers can be arranged on the whole surfaces of the first gate layer and the second gate layer. The first oxide layer and the second oxide layer are used for protecting the joint of the source-drain metal layer and the first gate layer or the second gate layer from being corroded by HF, so that the contact resistance of the source-drain metal layer and the first gate layer or the second gate layer is not affected, and the display effect of the display panel is kept stable.

Description

Technical field [0001] The invention relates to the field of display, in particular to a display panel and a preparation method thereof. Background technique [0002] Organic Light-Emitting Diode (OLED), due to its light weight, self-luminous, wide viewing angle, low driving voltage, high luminous efficiency, low power consumption, and fast response speed, has become more and more widely used, especially flexible The OLED display device has the characteristics of being bendable and easy to carry, and has become the main field of research and development in the field of display technology. [0003] In the existing display panel structure, because the buffer oxide etching solution (BOE) or hydrofluoric acid (HF) solution is used to clean the surface of the contact hole semiconductor, the source and drain (SD) and the semiconductor are formed well. Contact, but this will also cause the gate to be severely etched, resulting in an increase in the contact resistance between the source a...

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Problems solved by technology

[0003] In the existing display panel structure, due to the use of buffered oxide etchant (BOE) or hydrofluoric acid (HF) solution to clean the surface of the contact hole semiconductor, the source and drain (SD) and the semiconductor form a better Contact, but this will cause the gate to be severely etched at the same time, resulting in an increase in the contact resistance between the source and drain and the gate; but if BOE or HF is not used, the contact resistance between the source and drain is normal, but the source and drain The voltage of the resistance-capacitance circuit with the semiconductor will increase, and the convergence will become poor, which will affect the display effect of the display panel

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