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Programming method and system of memory

A programming method and programming system technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of memory life reduction and other problems, achieve the effects of increasing life, ensuring programming speed, and improving programming efficiency

Inactive Publication Date: 2020-02-25
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The invention provides a memory programming method and system to solve the technical problem that the life of the memory is reduced during programming

Method used

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  • Programming method and system of memory
  • Programming method and system of memory
  • Programming method and system of memory

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Experimental program
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Embodiment A

[0025] see figure 1 , figure 1 It is a schematic flow chart of a memory programming method in Embodiment A of the present invention. The memory programming method is used to improve the durability and ease of use of data read from the memory, so as to improve the life of the memory. The memory programming method includes the following steps:

[0026] Step S1: applying a programming voltage to the memory cell during the programming sequence B1;

[0027] Step S2: Applying a verification voltage to the memory cell when verifying the timing sequence Y1;

[0028] Step S3: If the verification fails, after the programming sequence B1, at least two programming voltages with increments are applied to the memory cell again to perform verification again, and the increment of the programming voltage is D vpgm Include at least the first increment D vpgm1 and the second increment D vpgm2 ,D vpgm1 >D vpgm2 , the greater the number of programming times, the increase in programming volta...

Embodiment B

[0043] see Figure 6 , Figure 6 It is a schematic diagram of the module structure of the programming system 12 of the memory of the present invention. The memory programming system 12 can execute the memory programming method provided by any embodiment of the present invention. The memory programming system 12 includes:

[0044] A programming module 121, configured to apply a programming voltage to the memory cell during programming sequence B1;

[0045] A verification module 122, configured to apply a verification voltage to the memory cell when verifying the sequence Y1;

[0046] If the verification fails, after the programming sequence B1, the programming module 121 applies at least two programming voltages with increments to the memory cell again, and the verification module 122 performs verification again, and the increment of the programming voltage is D vpgm Include at least the first increment D vpgm1 and the second increment D vpgm2 ,D vpgm1 >D vpgm2 , the la...

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Abstract

The invention discloses a programming method and system of a memory. The programming method of the memory comprises the following steps of applying a programming voltage to a storage unit when a timesequence B1 is programmed; applying a verification voltage to the storage unit when the time sequence Y1 is verified; if verification fails, applying at least two programming voltages with amplification to the storage unit again so as to carry out verification again, wherein the amplification Dvpgm of the programming voltage at least comprises a first amplification Dvpgm < 1 > and a second amplification Dvpgm < 2 >, the Dvpgm < 1 > is greater than the Dvpgm < 2 >, and the larger the programming frequency Q is, the smaller the amplification Dvers of the programming voltage is. The programming method and system of the memory have the advantage of prolonging the service life of the memory.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of memory, and in particular, to a memory programming method and system. Background technique [0002] Memory is a component that must be used in programming, such as Nand flash memory. Nand flash memory is a kind of non-volatile memory, which has the advantages of fast rewriting speed and large storage capacity. However, during the programming operation of the Nand flash memory, verification failures will occur, and after each verification failure, the amplitude of the programming voltage needs to be increased. In the prior art, every time the programming fails, the magnitude of the programming voltage increase is equal. When the programming voltage is close to the programming threshold, after the programming voltage is increased again, the programming voltage will be much larger than the programming threshold, which will cause The tunnel oxide film of the memory cell is affected,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/10G11C16/34
CPCG11C16/10G11C16/3404
Inventor 贺元魁潘荣华
Owner GIGADEVICE SEMICON (BEIJING) INC