Crystal bar taking-out protection assembly, crystal bar taking-out device and crystal bar taking-out method

Abstract

The invention provides a crystal bar taking-out protection assembly, a crystal bar taking-out device and a crystal bar taking-out method. The crystal bar taking-out protection assembly comprises: a protection module, which comprises a protection support, two rotating shafts and first power parts; a lifting module, which drives the protection module to ascend and descend in a first direction, i.e.,in a length direction of a crystal bar; a side surface protection module, which comprises two moving rods; protection elements, which are arranged at the opposite ends of two moving rods; and third power parts, which drive the moving rods to do reciprocating movement; wherein the protection support comprises two rotating arms and a supporting plate connected with two rotating arms; each rotatingarm can rotate around a rotating shaft; the first power parts drive the rotating shafts to rotate; one ends of two moving rods are connected to rotating arms; and the other ends of two moving rods areoppositely arranged and can move in a same direction or an opposite direction. The crystal bar taking-out protection assembly, the crystal bar taking-out device and the crystal bar taking-out methodprovided by the invention can improve the production efficiency of the crystal bar and the stability and safety of the transferring and taking-out link of the crystal bar.

Description

technical field [0001] The invention relates to the technical field of crystal growth, in particular to a protection component for taking out a crystal rod, a device for taking out a crystal rod and a method for taking out a crystal rod. Background technique [0002] Polysilicon is the main raw material for the production of solar photovoltaic products and semiconductor products. The Czochralski (Cz) method is one of the most commonly used preparation methods for monocrystalline silicon. The high-purity solid polycrystalline silicon raw material is melted in the crucible in the crystal growth furnace to form a melt, and the seed is lowered by the seed crystal pulling mechanism. The seed crystal is contacted with the molten silicon soup in the rotating crucible, and then the seed crystal is pulled out according to a certain process method, and the melt solidifies around the seed crystal to form a single crystal silicon rod. [0003] After the traditional Cz crystal growth fu...

AI Technical Summary

Problems solved by technology

These processes are time-consuming and labor-intensive, seriously affecting the removal of the drawn monocrystalline silicon rods, restricting the production efficiency of the Czochralski monocrystalline silicon rods, and there is a risk that the single crystal silicon rods are easily damaged; During the process of protecting the crystal ingot from lowering, fixing the ingot on the crystal transport trolley, cutting the crystal neck, and picking up the ingot by the crown crane for transfer, a large number of manual operations are involved. Some body parts are in the vertical projection plane of the ingot, which is less safe

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