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Semiconductor device

A semiconductor, conductive type technology, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc.

Pending Publication Date: 2020-02-28
KK TOSHIBA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the reduction of on-resistance and the improvement of avalanche durability are in a trade-off relationship

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0017] figure 1 It is a schematic cross-sectional view showing the semiconductor device 1 according to the first embodiment. The semiconductor device 1 is, for example, a power MOS transistor having a superstructure structure.

[0018] like figure 1 As shown, the semiconductor device 1 includes a semiconductor portion 10 , a source electrode 20 , a drain electrode 30 , and a gate electrode 40 . The semiconductor device 1 has a vertical structure in which the semiconductor portion 10 is arranged between the source electrode 20 and the drain electrode 30 . The source electrode 20 is provided on the surface of the semiconductor portion 10 . The drain electrode 30 is provided on the inner surface of the semiconductor portion 10 .

[0019] Semiconductor portion 10 includes n-type column layer 12 , p-type column layer 13 , p-type diffusion layer 15 , and n-type source layer 17 .

[0020] The n-type column layers 12 and the p-type column layers 13 are alternately arranged, for e...

no. 2 Embodiment approach

[0055] Figure 7 (a) and (b) are schematic cross-sectional views showing semiconductor devices 4 and 5 according to the second embodiment. Figure 7 (a) is a schematic diagram showing a trench gate MOS transistor. Figure 7 (b) is a schematic diagram showing a trench gate MOS transistor having a superstructure structure.

[0056] like Figure 7 As shown in (a), the semiconductor device 4 includes a source electrode 20 , a drain electrode 30 , a gate electrode 60 , and a semiconductor portion 50 . The source electrode 20 is provided on the surface of the semiconductor portion 50 , and the drain electrode 30 is provided on the inner surface of the semiconductor portion 50 . The gate electrode 60 is located between the source electrode 20 and the semiconductor portion 50 , and is disposed inside the gate trench GT provided in the semiconductor portion 50 via a gate insulating film 63 .

[0057] The semiconductor portion 50 includes an n-type drift layer 51 , a p-type diffusio...

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PUM

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Abstract

A semiconductor device includes: a semiconductor body, which includes a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type; a secondelectrode provided on a first electrode on the surface of the semiconductor body; and a control electrode provided on the inner surface of the semiconductor body and provided between the semiconductorbody and the first electrode. The second semiconductor layer is located between a part of the first semiconductor layer and another part of the first semiconductor layer in a first direction along the surface of the semiconductor body. The semiconductor body further includes a third semiconductor layer of the second conductivity type and a fourth semiconductor layer of the first conductivity type. The third semiconductor layer includes: a first end portion located in the part of the first semiconductor layer; and a second end portion located in the second semiconductor layer, wherein the fourth semiconductor layer is provided at the second end portion of the third semiconductor layer.

Description

[0001] Associate application [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2018-154251 (filing date: August 20, 2018). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] Embodiments relate to semiconductor devices. Background technique [0004] In high voltage semiconductor devices for power control, low on-resistance and high avalanche durability are required. However, the reduction of on-resistance and the improvement of avalanche durability are in a trade-off relationship. Contents of the invention [0005] Embodiments provide a semiconductor device capable of reducing on-resistance without reducing avalanche durability. [0006] A semiconductor device according to an embodiment includes: a semiconductor portion including a first semiconductor layer of a first conductivity type and a second semiconductor layer of a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/7802H01L29/7813H01L29/0634H01L29/66712H01L29/66734H01L29/1095H01L29/0696H01L21/26586H01L29/0878
Inventor 山下浩明小野升太郎一条尚生菅原秀人大田浩史
Owner KK TOSHIBA