Power semiconductor circuit and method for determining the temperature of a power semiconductor device
A power semiconductor and circuit technology, applied in the direction of semiconductor devices, single semiconductor device testing, semiconductor/solid-state device components, etc., can solve the problems of not measuring temperature, reducing the area of semiconductor devices, and increasing space requirements for TCS-IGBTs
Active Publication Date: 2022-04-15
INFINEON TECH AG
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Problems solved by technology
The disadvantage of this is that the temperature is not measured inside the hottest semiconductor device
The disadvantage of this arrangement is that it increases the space requirement and thus possibly reduces the area for the actual semiconductor device
The disadvantage of this arrangement is that part of the cells of the IGBT is used for current measurement and therefore cannot be used for the actual task of the IGBT
This also results in an increased space requirement for the TCS-IGBT and an increased number of terminals
Method used
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[0049] Hereinafter, for simplicity, it is assumed that the power semiconductor element is an IGBT. Of course, all other power semiconductor switches such as MOSFET transistors, field effect transistors, bipolar transistors and thyristors should be considered in the same way. The terms IGBT gate, collector and emitter are used in the general description of the invention.
[0050] In the different figures, equivalent components always have the same reference signs with respect to their function, so these are usually only described once.
[0051] figure 1 A TCS-IGBT according to the prior art is shown. Part of the IGBT unit is used for current measurement (IGBT S ). The remaining cells are used as actual IGBTs, which can be used to control loads (IGBT L ). The IGBT has an emitter E and an auxiliary emitter HE. The load to be controlled can be connected to the emitter E. The auxiliary emitter HE is used to measure the current. In this embodiment, HE denotes the ground or ...
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The invention relates to a power semiconductor circuit (1) for determining the temperature of a power semiconductor component (20). The power semiconductor circuit includes a power semiconductor element and a temperature sensor (10), wherein the power semiconductor element includes a gate (G), a collector (C) and an emitter (E) for driving and controlling the power semiconductor element, wherein the emitter ( E) Electrically connected to the first emitter terminal (HE), the temperature sensor comprises a first measurement point (11) and a second measurement point (12) with a measurement terminal (TC), wherein the second measurement point is electrically connected to the emitter (E) so that the voltage dropped across the temperature sensor (10) can be measured between the measurement terminal and the first emitter terminal for temperature measurement. The invention also relates to a method for determining the temperature of a power semiconductor component (20) by means of the power semiconductor circuit (1), and a bridge circuit having at least one power semiconductor circuit (1).
Description
technical field [0001] The invention relates to a power semiconductor circuit for determining temperature and, if necessary, current, comprising a power semiconductor element and a temperature sensor, wherein the power semiconductor element comprises a gate, a collector and an emitter for driving the power semiconductor element , wherein the emitter is electrically connected to the first emitter terminal, and the temperature sensor includes a first measurement point and a second measurement point with measurement terminals. Background technique [0002] Insulated gate bipolar transistors (IGBTs) are semiconductor devices (also referred to herein as power semiconductor devices) used in power electronics. Such semiconductor devices are exposed to high temperature and high current, which may cause damage to the semiconductor device. [0003] To protect semiconductor devices from high temperatures, temperature sensors are used. In this case, a separate temperature sensor is of...
Claims
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IPC IPC(8): G01R31/26G01R31/27G01K7/24G01K7/01
CPCG01R31/2608G01R31/275G01R31/2607G01K7/24G01K7/01H03K17/0828H03K2017/0806H03K2217/0027H01L2224/49111H01L2224/48139H01L2224/49113H01L2224/48137H01L2224/0603G01R19/14H01L23/34H01L24/48H01L25/18H01L29/66992H01L29/7393H03K17/08122H03K17/08128G01K7/20G01R31/2619G01R31/2628
Inventor A·阿伦斯W·加科比
Owner INFINEON TECH AG