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Active driving type photoelectric sensor, front-end circuit and driving method

A photoelectric sensor and active driving technology, applied in the field of photoelectric sensors, can solve the problems of slow response speed, weak driving ability and slow response speed of TFT integrated photoelectric sensor

Active Publication Date: 2020-03-27
PEKING UNIV SHENZHEN GRADUATE SCHOOL +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current value in the sub-threshold region and the leakage region is actually much smaller than the current in the conduction region, which leads to the weak driving ability and slow response speed of the traditional TFT integrated photo-sensing circuit.
In particular, there is a large parasitic capacitance between the gate-source and gate-drain of the a-Si TFT element, which further leads to the slow response speed of the TFT integrated photosensor

Method used

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  • Active driving type photoelectric sensor, front-end circuit and driving method
  • Active driving type photoelectric sensor, front-end circuit and driving method
  • Active driving type photoelectric sensor, front-end circuit and driving method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] see image 3 , the present application provides an actively driven photoelectric sensor, including a power supply terminal 10, a first terminal 11, a second terminal 12 and a photosensitive output part 13, which will be described in detail below.

[0078] The power supply terminal 10 is used to receive power supply, including the high voltage input terminal V DD and low voltage input V SS , to provide electrical energy for the dynamic-driven photoelectric sensor.

[0079] The first terminal 11 is used to receive external light, so that the sensing element of the actively driven photoelectric sensor can output a corresponding electrical signal according to the external light.

[0080] The second terminal 12 is used to receive a periodic electrical excitation signal to modulate and optimize the output of the electrical signal of the photoelectric sensor by adding different waveforms of the periodic electrical excitation signal. The periodic electrical excitation signal ...

Embodiment 2

[0098] Such as Figure 7 , the present application provides a driving method for an actively driven photoelectric sensor, including step S10 to step S30, which will be described in detail below.

[0099] Step S10: receiving a periodic electrical excitation signal.

[0100] Step S20: adjusting the illumination threshold according to the periodic electrical excitation signal.

[0101] Step S30: Modulating the output of the electrical signal according to the illumination threshold and the received external light.

[0102] In the embodiment of the present invention, a periodic electrical excitation signal is applied to the active-driven photoelectric sensor, wherein the periodic electrical excitation signal includes a voltage signal or a current signal, and the active-driven photoelectric sensor The light threshold is adjusted, and then the output of the electrical signal is modulated according to the light threshold and the received external light. When the illumination thresh...

Embodiment 3

[0111] see Figure 10 , the present application provides a front-end circuit of a photoelectric sensor system, including a filter circuit 02, an operational amplifier circuit 03, and the above-mentioned photoelectric sensor 01, which will be described in detail below.

[0112] The photoelectric sensor 01 includes a power supply terminal, a first terminal, a second terminal and an optical sensor output part, the specific content of which is consistent with that of Embodiment 1, and will not be described again.

[0113] The filtering circuit 02 is used to filter the output electrical signal and output the filtered signal;

[0114] The operational amplifier circuit 03 is used to amplify the filtered signal and output the amplified signal.

[0115] In one possible implementation manner, the front-end circuit of the photoelectric sensing system further includes: an ADC analog-to-digital converter 04 , configured to perform analog-to-digital conversion on the received amplified sig...

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PUM

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Abstract

The invention provides an active driving type photoelectric sensor, a front-end circuit and a driving method. The active driving type photoelectric sensor comprises a power supply end, a first terminal, a second terminal and a light sensing output part. The power supply end is used for receiving a power supply, the first terminal is used for receiving the external light, the second terminal is used for receiving a periodic electric excitation signal, and the light induction output part is used for adjusting an illumination threshold value according to the periodic electric excitation signal, so that the output of an electric signal is modulated according to the illumination threshold value and the received external light. Through the active driving type photoelectric sensor, the illumination threshold can be adjusted, the output of the photoelectric sensor is further optimized, and the stable and controllable photoelectric response is realized.

Description

technical field [0001] The present application relates to the technical field of photoelectric sensors, in particular to an actively driven photoelectric sensor, a front-end circuit and a driving method. Background technique [0002] Amorphous silicon thin film transistor (a-Si TFT) is currently the most mainstream active display backplane technology, which is widely used in small-sized TFT liquid crystal displays (TFT-LCD) of smartphones and large-sized TV panels. Traditionally, a-Si TFTs are only used as switching elements of TFT-LCD arrays. It is worth noting that the electrical characteristics of a-Si TFT are closely related to the external spectrum and light intensity. When the external light intensity increases, its subthreshold current and off-state current will increase by 10 times or more. Under the action of strong external light, more defect state electrons in the band tail state of the a-Si layer are excited to become conduction state electrons, thus forming a ...

Claims

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Application Information

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IPC IPC(8): G01D5/26
CPCG01D5/26
Inventor 张盛东廖聪维钟德镇郑会龙李海波
Owner PEKING UNIV SHENZHEN GRADUATE SCHOOL
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