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Lithium-aluminum-silicon-based glass material capable of photolithography, preparation method and application thereof

A glass material, lithium aluminum silicon technology, applied in the direction of glass manufacturing equipment, glass molding, manufacturing tools, etc., can solve problems such as difficult to meet the application of electronic devices, unable to meet the use requirements, glass strength decline, etc., to weaken the overall polarization rate, reduce the number of non-bridging oxygen, and reduce the effect of corrosion

Active Publication Date: 2022-03-11
CHINA BUILDING MATERIALS ACAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Schott has disclosed a Foturan photolithographic glass with a composition ratio of SiO 2 75~85wt%, Li 2 O 7~11wt%, K 2 O and Al 2 o 3 3~6wt%, Na 2 O 1~2wt%, ZnO2 o 3 0.2~0.4wt%, Ce 2 o 3 0.01~0.04wt%, Ag 2 O 0.05~0.15wt%, the photoetching glass is difficult to meet the application in the field of electronic devices due to its large dielectric constant and large dielectric loss.
The University of Electronic Science and Technology of China has disclosed a photoetching glass whose composition ratio is SiO 2 63~72wt%, Li 2 O 6~12wt%, Na 2 O 1~5wt%, K 2 O 3~9wt%, Al 2 o 3 2~5wt%, ZnO 1~4wt%, Sb 2 o 3 0.5~0.9wt%, Ce 2 o 3 0.02~0.06wt%, Ag 2 O 0.09~0.16wt%, B 2 o 3 2~5wt%, BaO 0.5~2wt% or (and) CaO 0.5~3wt%, MgO 1~5wt%, at 1MHz, the dielectric coefficient is 4.2~5.6, and the dielectric loss is 2~4×10 -3 , the photoetching glass has been improved for the dielectric properties and has been greatly improved, but it is found in the application that due to the Si in the glass 2 The mass percentage of O is greatly reduced, and the proportion of alkali metal oxides is large, resulting in a substantial decrease in glass strength. After microstructural processing of photoetching glass substrates, it is very easy to break, and the Young's modulus is less than 10GPa. Meet the needs of use

Method used

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  • Lithium-aluminum-silicon-based glass material capable of photolithography, preparation method and application thereof
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  • Lithium-aluminum-silicon-based glass material capable of photolithography, preparation method and application thereof

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preparation example Construction

[0036] The preparation method of the photolithographic lithium-aluminum-silicon glass material of the above-mentioned embodiment 1-embodiment 5 comprises the following steps:

[0037] 1) Mix high-purity quartz sand, lithium carbonate, anhydrous potassium carbonate, aluminum hydroxide, anhydrous sodium carbonate, zinc oxide, antimony trioxide, cerium nitrate hexahydrate, and silver nitrate according to the formula in Table 1, respectively , to get the batch material;

[0038] 2) Put the batch material obtained in step 1) into the mixer to fully grind and mix, and sieve through 40 mesh; put it in a high-temperature melting furnace, melt it at 1520°C for 1 hour, and stir it at a speed of 15r / min for 1 hour hour, then stirred at a speed of 30r / min for 2 hours, then stirred at a speed of 15r / min for 1 hour (to make clarification and homogenization better), so that the batch material was completely melted into a liquid state for clarification and homogenization;

[0039] 3) After t...

Embodiment 3

[0045] The Al content of embodiment 3 is identical with embodiment 1, but because Li + The higher the content, the stronger the ion polarization in the glass, the higher the dielectric constant, the weaker the mixed alkali effect, and the higher the dielectric loss.

Embodiment 6

[0047] This embodiment provides a method for preparing a photolithographic lithium-aluminum-silicon-based glass material. The difference between this preparation method and the preparation method in the above-mentioned embodiment 1 is that the melting temperature in step 2) of this embodiment is 1500° C. . The specific components of the prepared lithium-aluminum-silicon glass material are the same as those in Example 1.

[0048] Photolithographic glass can also be obtained by lowering the melting temperature, but there are occasional unmelted materials in the formed glass block. It has been verified that the glass obtained by this process still has photosensitive properties, but in the subsequent processing process, it must be avoided. Impurities such as unmelted material.

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Abstract

The invention relates to a photoetching lithium-aluminum-silicon glass material and its preparation method and application. The components of the lithium-aluminum-silicon glass material by weight percentage are: SiO 2 72~76wt%; Li 2 O 10~15wt%; K 2 O 3~4wt%; Al 2 o 3 6~8wt%;Na 2 O 2~3wt%; ZnO 1~1.2wt%; Sb 2 o 3 0.8~1.5wt%; Ce 2 o 3 0.04~0.08wt%; Ag 2 O 0.04 to 0.08 wt%. The photoetched lithium-aluminum-silicon glass material prepared in the present invention has simple and clear material composition, convenient production process, and the prepared glass material has the same photosensitivity as the same type of glass.

Description

technical field [0001] The invention belongs to the field of glass materials, and in particular relates to a photolithographic lithium-aluminum-silicon glass material and a preparation method and application thereof. Background technique [0002] Photolithographic lithium aluminum silicon glass is a functional glass material compatible with microelectronics technology. After ultraviolet lithography and wet etching processes, specific microstructures can be prepared on its surface or inside, and are widely used in communication, aerospace, biomedicine and other fields. [0003] The processability of photolithographic Li-Al-Si glass comes from the trace amount of photosensitizer (Ce 2 o 3 ), nucleating agent (Ag 2 O) and a weak reducing agent (Sb 2 o 3 ). Among them, the photosensitive cerium ions are represented by Ce 3+ and Ce 4+ The form exists in the glass network, while the weak reducing agent Sb 2 o 3 maintain Ce 3+ relative content. Under the irradiation of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C3/095C03C6/04C03B19/02C03C15/00
CPCC03C3/095C03C1/00C03B19/02C03C15/00
Inventor 韩勖朱永昌于雷崔竹关铭刘峻
Owner CHINA BUILDING MATERIALS ACAD
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