Photodiode and preparation method thereof, display substrate and display device
A technology of photodiodes and display substrates, applied in radiation control devices, circuits, electrical components, etc., can solve problems such as unfavorable full-screen display, complex light sensor structure, and affecting the display effect of the display screen
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Embodiment 1
[0047] figure 1 A schematic flow diagram of a method for preparing a photodiode provided by an embodiment of the present invention, as figure 1 Shown, the preparation method of this photodiode comprises the steps:
[0048] S101, forming a semiconductor material layer on a substrate.
[0049] Such as figure 2 As shown, a layer of semiconductor material layer 20 can be formed on a substrate 201 by using a semiconductor material. The semiconductor material layer 20 includes: a first contact region 202, a second contact region 203, and a The semiconductor region 204 between the contact regions 203 . It can be understood that the semiconductor material may be a P-type semiconductor or an N-type semiconductor. In the embodiment of the invention, the semiconductor material is a P-type semiconductor as an example for illustration.
[0050] S102, processing the first contact region of the semiconductor material layer to form a first contact electrode.
[0051] Such as image 3 ...
Embodiment 2
[0072] Based on the same inventive concept, an embodiment of the present invention provides a photodiode, and the structure of the photodiode can be as follows Figure 8 As shown, the photodiode includes: a substrate 201, a first semiconductor layer 2041, a second semiconductor layer 2042, a first contact electrode 2021, a second contact electrode 2031, an interlayer insulating layer 205, a first via hole 206, a second via hole hole 207 , first connection electrode 208 and second connection electrode 209 .
[0073] The first semiconductor layer 2041 is located on the substrate 201; the first contact electrode 2021 is located at one end of the first semiconductor layer 2041; the second semiconductor layer 2042 is located on the first semiconductor layer 2041; the second contact electrode 2031 is located on the second semiconductor layer 2042 away from the first semiconductor layer One end of a contact electrode 2021; the interlayer insulating layer 205 is located on the first c...
Embodiment 3
[0076] An embodiment of the present invention provides a display substrate, and the display substrate includes the photodiode provided in the above embodiment. The display substrate has a display area and a non-display area. The photodiode is located in the non-display area of the display substrate. While sensing ambient light, the photodiode can avoid blocking the display area of the display substrate and affecting the display effect.
[0077] Optionally, the display substrate further includes: a pixel unit located in the display area of the display substrate, and a first power supply terminal and a second power supply terminal connected to the pixel unit; the first power supply terminal is connected to the first connection electrode; the second power supply terminal Connect to the second connection electrode.
[0078] It should be noted that, the first power supply terminal and the second power supply terminal can provide driving current for the display device in the p...
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