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Semiconductor device

A technology of semiconductors and components, applied in information storage, static memory, instruments, etc., can solve problems such as minimization of circuit components or wiring inhomogeneity, reduction of randomness of PUF or inherent data, etc., and achieve the effect of maintaining randomness

Active Publication Date: 2020-04-03
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, minimizing the unevenness of circuit elements or wiring, etc., will bring uniformity to circuit elements or wiring, which may reduce the randomness (unpredictability) of PUF or inherent data

Method used

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  • Semiconductor device
  • Semiconductor device
  • Semiconductor device

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Embodiment

[0043] figure 1 The structure of the NAND flash memory provided by the embodiment of the present invention. The flash memory 100 of the present embodiment includes: a memory cell array 110, formed by a plurality of memory cells arranged in rows and columns; an input / output buffer 120, connected to an external input / output terminal I / O and maintaining input / output data; an address The temporary register 130 receives the address data from the I / O buffer 120; the controller 140, according to the instruction data from the I / O buffer 120 and external control signals (command latch enable, CLE for short, address latch enable, ALE for short, etc. ) to supply and control each part; the word line selection circuit 150 performs block selection and page selection according to the column address data Ax from the address register 130; the page buffer / sensor 160 maintains the slave selection The data read out of the page and the data to be programmed to the selected page are kept; the row ...

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PUM

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Abstract

The present invention provides a semiconductor device having a function of generating intrinsic data by using a new method. The NAND-type flash memory is provided with: a memory cell array, a paging buffer / sense circuit, and a differential sense amplifier that detects a potential difference of a bit line pair of a dummy array when the dummy array of the memory cell array is read out, wherein a NAND flash memory outputs unique data of the semiconductor device in accordance with a detection result of the differential sense amplifier. The present invention can ensure randomness of intrinsic datawhile maintaining reproducibility and reliability of a semiconductor device.

Description

technical field [0001] The present invention relates to a semiconductor device with the function of generating inherent data, and particularly relates to a semiconductor device utilizing a NAND flash memory to generate inherent data. Background technique [0002] With the enhancement of the security of electronic devices or electronic devices, countermeasures are required to prevent counterfeiting or counterfeiting of semiconductor devices physically mounted on the above-mentioned devices. In a certain method, when the unique data is given to the semiconductor device and verified, the semiconductor device can be regarded as a genuine product and allowed to be used. Inherent data, such as non-volatile memory that can be stored in the semiconductor device, but this method has the risk of analyzing the semiconductor device to read the inherent data, or illegally accessing the semiconductor device from the outside to allow the inherent data to be read. . [0003] In recent yea...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/26G11C16/24
CPCG11C16/26G11C16/24
Inventor 冈部翔
Owner WINBOND ELECTRONICS CORP