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Device and method for preparing distorted heterojunction based on second harmonic in-situ monitoring

A second harmonic and preparation device technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of simple design of test sample table and inability to meet multi-axis precision movement, and expand design and manufacturing capabilities , to achieve the effect of large-scale production

Pending Publication Date: 2020-04-03
南京迈塔光电科技有限公司
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Problems solved by technology

However, this method is usually used in the stage of sample testing and analysis at present, and it is not organically combined with the sample preparation process, and the design of the test sample stage is relatively simple, which cannot meet the requirements of multi-axis precision movement [Document 2]

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  • Device and method for preparing distorted heterojunction based on second harmonic in-situ monitoring
  • Device and method for preparing distorted heterojunction based on second harmonic in-situ monitoring
  • Device and method for preparing distorted heterojunction based on second harmonic in-situ monitoring

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Embodiment Construction

[0041] The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

[0042] figure 1 It is a schematic diagram of the second harmonic signal lattice orientation test for the target sample in the present invention, figure 2 It is a schematic diagram of the second harmonic signal lattice orientation test of the transferred sample in the present invention. Such as figure 1 , 2 As shown, the preparation device of the twisted two-dimensional heterojunction based on the second harmonic in-situ monitoring of the present invention includes a target sample stage 1, a transfer sample stage 2, a focusing objective lens 3, a second beam splitter 4, and an optical filter set 5 , a first beam splitter 6, a signal converging objective lens 7, a second harmonic signal detector 8, and a bright field imaging CCD9. The target sample table 1 is installed on the target sample rotary table 12, and the target sample rotary table ...

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Abstract

The invention discloses a device and a method for preparing a distorted heterojunction based on second harmonic in-situ monitoring, which realize all-optical, non-destructive and in-situ monitoring oflattice orientation of a two-dimensional material crystal and can respectively perform angle calibration on a target sample and a sample to be transferred. According to the invention, the preparationof the distorted heterojunction at any angle can be realized, so that the design and manufacturing capability of a distorted device can be greatly expanded, more novel physical characteristics can beexplored, and the large-scale production of the device can be realized.

Description

technical field [0001] The invention belongs to the field of preparation of new electronic devices, and in particular relates to an all-optical, non-destructive, in-situ monitoring of the crystal lattice orientation of two-dimensional material crystals by using the second harmonic model of two-dimensional materials, and can separately monitor target samples and The sample to be transferred is subjected to angle calibration. Background technique [0002] Twisted two-dimensional heterojunction refers to the vertical stacking of two-dimensional materials or low-dimensional materials, and the lattice orientation between layers has a certain angle, such as double-layer twisted graphene, MX2 / MoS2, etc. This twisted two-dimensional heterojunction will have a great impact on the band structure and correlation strength of the original intrinsic material through the van der Waals interaction force and lattice interaction between layers, showing superconductivity and Mott insulation. ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268H01L21/428
CPCH01L21/268H01L21/428
Inventor 雎长城蒋尚池
Owner 南京迈塔光电科技有限公司
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