MEMS gas sensor with temperature sensing function and preparation method thereof
A gas sensor, temperature sensing technology, applied in the sensor field, can solve the problems of resistance aging and power consumption increase
Pending Publication Date: 2020-04-10
武汉微纳传感技术有限公司
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[0006] Aiming at the technical problems of serious resistance aging and power consumption increase of the temperature sensing electrode caused by the design of the shared resistance heating layer and temperature sensing electrode layer existing in the prior art, the present invention provides a sensor with temperature sensing function. MEMS gas sensor and preparation method thereof
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Embodiment 2
[0051] The embodiment of the present invention also provides a method for preparing a MEMS gas sensor with a temperature sensing function, comprising the following steps:
[0052] Step S10 , depositing a first insulating support layer 2 on the substrate 1 .
[0053] Step S20 , depositing the resistance heating layer 3 on the first insulating support layer 2 .
[0054] Step S30 , depositing a second insulating support layer 4 , the second insulating support layer 4 covers the resistance heating layer 3 and the first insulating support layer 2 .
[0055] Step S40 , depositing the first interdigital electrode 5 , the second interdigital electrode 7 and the temperature sensing electrode 8 on the second insulating support layer 4 .
[0056] Step S50 , opening a through hole by photolithography to form a pad.
[0057] The photoresist is used to protect, a window is opened on the pad, and the second insulating support layer material in the pad area is etched by dry PLASMA to expose...
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The invention relates to an MEMS gas sensor with a temperature sensing function. The MEMS gas sensor comprises a substrate, a first insulating support layer, a resistance heating layer, a second insulating support layer, a first interdigital electrode, a second interdigital electrode, a temperature sensing electrode and a gas sensitive material layer, wherein the first insulating support layer isarranged on the substrate, the resistance heating layer is arranged on the first insulating support layer, and the second insulating support layer covers the resistance heating layer; the first interdigital electrode, the second interdigital electrode and the temperature sensing electrode are arranged on the second insulating support layer; the gas sensitive material layer covers the first interdigital electrode, the second interdigital electrode and the temperature sensing electrode; the first interdigital electrode, the second interdigital electrode and the temperature sensing electrode arelocated in the same layer, and the temperature sensing electrode is located between the first interdigital electrode and the second interdigital electrode. According to the MEMS gas sensor with the temperature sensing function, the resistance heating layer does not need to bear impact of a high current for a long time in the life cycle, and the technical problem of resistance aging can be solved.
Description
technical field [0001] The invention relates to the technical field of sensors, in particular to a MEMS gas sensor with a temperature sensing function and a preparation method thereof. Background technique [0002] A gas sensor is a device that converts information such as gas composition and concentration into information that can be used by personnel, instruments, computers, etc. MEMS metal-oxide-semiconductor gas sensors are widely used due to their long life, small size, low power consumption, and low cost. MEMS metal oxide semiconductor gas sensors belong to the category of chemical sensors. During operation, the MEMS micro-hot plate chip provides the temperature conditions required for the gas sensor to work. The gas to be detected reacts chemically with the semiconductor gas-sensitive material to change the resistance of the semiconductor gas-sensitive material. Rate, by testing the semiconductor to detect the change of the sensitive resistance of the gas-sensitive m...
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IPC IPC(8): G01N27/12G01K7/16
CPCG01N27/12G01N27/128G01K7/16
Inventor 雷鸣刘曰利饶吉磊詹欢欢熊艳
Owner 武汉微纳传感技术有限公司