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A kind of preparation method of double ferroelectric bismuth ferrite/bismuth vanadate photoelectrochemical thin film

A photoelectrochemical, bismuth ferrite technology, applied in electrolytic inorganic material coating, coating, energy input and other directions, can solve the problem of low photocurrent density of photoanode, achieve low size and shape requirements, excellent photocatalytic performance, chemical Precise dosing ratio

Active Publication Date: 2022-06-07
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, currently obtained BiVO 4 The actual photocurrent density of the photoanode is much lower than the theoretical value, which is mainly due to the BiVO 4 It is caused by the electron-hole recombination of the photoanode, so it is very important to modify it

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0021] 1) Clean the conductive glass FTO (2cm*2cm), then use detergent, water, deionized water, and acetone to ultrasonically clean for 10 minutes, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol). The mixed solution was ultrasonically cleaned for 60 minutes;

[0022] 2) Dissolve 0.04M bismuth nitrate pentahydrate and 0.4M potassium iodide in 50ml deionized water, and add 0.01M metal nitrate ion Co 2+ , then add nitric acid to adjust the pH to 2, and uniformly stir to obtain solution A;

[0023] 3) 0.23M p-benzoquinone was dissolved in 20ml ethanol, stirred for 10 minutes to obtain solution B;

[0024] 4) Mix solution A and solution B as the electrodeposition solution, and use the three-electrode method for electrodeposition, with FTO as the working electrode, Ag / AgCl as the reference electrode, and platinum wire as the counter electrode. Deposition for 5 min at a constant potential of -0.1V vs (Ag / AgCl), and cleaning with deionized water to obtai...

Embodiment example 2

[0027] 1) Clean the conductive glass FTO (2cm*2cm), use detergent, water, deionized water, and acetone to ultrasonically clean for 20 minutes in turn, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol). The mixed solution was ultrasonically cleaned for 40 minutes;

[0028] 2) Dissolve 0.2M bismuth nitrate pentahydrate and 0.4M potassium iodide in 50ml deionized water, and add 0.005M metal lead chloride ion Pd 2+ , then add nitric acid to adjust the pH to 2, and uniformly stir to obtain solution A;

[0029] 3) 0.5M p-benzoquinone was dissolved in 20ml ethanol, stirred for 30 minutes to obtain solution B;

[0030] 4) Mix solution A and solution B as the electrodeposition solution, and use the three-electrode method for electrodeposition, with FTO as the working electrode, Ag / AgCl as the reference electrode, and platinum wire as the counter electrode. Deposition for 5 min at a constant potential of -0.4V vs (Ag / AgCl), and cleaning with deionized water ...

Embodiment example 3

[0033] 1) Clean the conductive glass FTO (2cm*2cm), then use detergent, water, deionized water, and acetone to ultrasonically clean for 10 minutes, and then use a volume ratio of 1:1:1 (deionized water, acetone, isopropanol). The mixed solution was ultrasonically cleaned for 60 minutes;

[0034] 2) Dissolve 0.1M bismuth nitrate pentahydrate and 0.2M potassium iodide in 50ml deionized water, and add 0.005M Ag + , 0.001M Pt 4+ , then add nitric acid to adjust the pH to 3, and evenly stir to obtain solution A;

[0035] 3) 0.1M p-benzoquinone was dissolved in 20ml of ethanol, and stirred for 10 minutes to obtain solution B;

[0036] 4) Mix solution A and solution B as the electrodeposition solution, and use the three-electrode method for electrodeposition, with FTO as the working electrode, Ag / AgCl as the reference electrode, and platinum wire as the counter electrode. Deposition at a constant potential of 0.2V vs (Ag / AgCl) for 5 min, and cleaning with deionized water to obtain...

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Abstract

The invention discloses a preparation method of a double ferroelectric bismuth ferrite / bismuth vanadate photoelectrochemical thin film. The steps are: 1) FTO pretreatment; 2) dissolving bismuth nitrate pentahydrate and potassium iodide in water, adding metal salt ions, nitric acid to adjust the pH value; 3) dissolving p-benzoquinone in ethanol; 4) dissolving the two After mixing, the thin film electrode is obtained by electrochemical deposition; 5) the dimethyl sulfoxide dissolved in ferrous acetylacetonate and vanadyl acetylacetonate is dropped into the thin film electrode obtained in 4), and the high temperature heat treatment is carried out in a tube furnace to obtain a bismuth Ferroelectric doped bismuth ferrite bismuth vanadate film. The invention discloses a method for preparing a double ferroelectric bismuth ferrite / bismuth vanadate photoelectrochemical thin film. The preparation method is simple and easy to implement, and has relatively low requirements for the size and shape of the bottom electrode. The film has uniform quality, large specific surface area, and stoichiometric The ratio is accurate, the photocatalytic performance is excellent, the photolysis water efficiency is high, and the research on doping modification is easy.

Description

technical field [0001] The invention relates to a preparation method of a double ferroelectric bismuth ferrite / bismuth vanadate photoelectrochemical thin film. Background technique [0002] With the rapid development of society and economy, energy shortage and environmental pollution are two thorny problems facing human society at present. The direct use of solar energy to solve global energy and pollution problems has attracted more and more attention from human beings. Photoelectrochemical (PEC) water splitting, which generates hydrogen and oxygen under sunlight irradiation, is regarded as one of the most promising strategies to solve the energy and environmental crisis due to its high theoretical conversion efficiency and low cost. Among the existing semiconductors, the ferroelectric material BiVO 4 Attracting a lot of attention, BiVO with a band gap of 2.4 eV 4 It is considered as one of the promising PEC photoanode materials due to its good photoelectrochemical proper...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/00C03C17/25C25D9/04
CPCC03C17/006C03C17/25C25D9/04C03C2218/11Y02P20/133
Inventor 于濂清王艳坤赵兴雨张亚萍朱海丰
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)