6-T storage unit total dose resistance reinforcing method based on threshold voltage type matching

Abstract

The invention relates to a 6-T storage unit total dose resistance reinforcing method based on threshold voltage type matching. The method comprises a transistor total dose irradiation test, establishment of a mapping relationship between transistor radiation damage and a threshold voltage type, determination of the pull-up PMOSFET threshold voltage type, determination of the pull-down NMOSFET and\ transmission NMOSFET threshold voltage type, and circuit simulation verification. The theoretical basis of the method is that radiation damage degrees of transistors of different threshold voltage types are different. The method has the advantages that manufacturing process conditions and layout design do not need to be changed, and low-cost and high-performance total dose resistance reinforcement of a 6-T storage unit is achieved.

Description

technical field [0001] The invention belongs to the technical field of radiation-resistant memory circuit design, and in particular relates to a 6-T storage unit anti-total dose hardening method based on threshold voltage type matching. Background technique [0002] The storage unit is the basic component of the static random access memory (SRAM) circuit. The peripheral circuit completes the data access by reading and writing the specific storage unit in the storage unit array. The performance of the storage unit directly affects the performance of the SRAM circuit. The 6-T memory cell is a mainstream SRAM memory cell structure, consisting of 6 transistors, including 2 pull-up PMOSFETs, 2 pull-down NMOSFETs, and 2 pass-through NMOSFETs. The pull-up PMOSFET and the pull-down NMOSFET form an inverter connected to each other, and the transmission NMOSFET is used for the control of the read and write operations of the storage unit. The 6-T memory cell is currently the most comm...

AI Technical Summary

Problems solved by technology

[0005] The present invention proposes a 6-T memory cell anti-total dose hardening method based on threshold voltage type matching, which utilizes the characteristics of different threshold voltage type transistors with different total dose radiation damage sensitivities to match the memory cell transistor threshold voltage type without changing the process Under the condition of different conditions and layout structure, improve the anti-total dose radiation ability of the storage unit, and overcome the shortcomings of the current process reinforcement and design reinforcement

Images