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Resonator with gap of step structure being partially filled, filter and electronic equipment

A resonator, bulk acoustic wave resonator technology, applied in electrical components, impedance networks, etc.

Pending Publication Date: 2020-04-14
TIANJIN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in practical applications, there is still a need to further suppress the acoustic waves of the transverse vibration mode to increase the parallel resonance impedance Rp of the resonator to improve the Q value of the resonator

Method used

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  • Resonator with gap of step structure being partially filled, filter and electronic equipment
  • Resonator with gap of step structure being partially filled, filter and electronic equipment
  • Resonator with gap of step structure being partially filled, filter and electronic equipment

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Embodiment Construction

[0052] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.

[0053] Refer below Figure 4-10 A bulk acoustic wave resonator according to one embodiment of the present invention is described.

[0054] Figure 4 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. Figure 5 According to an exemplary embodiment of the present invention, along Figure 4 A schematic cross-sectional view of a bulk acoustic wave resonator taken along line 2B-2B in . Figure 6 for Figure 5 A partial enlarged view of the cantilever part in .

[0055] exist...

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Abstract

The present invention relates to a bulk acoustic wave resonator, and the resonator comprises a substrate; an acoustic mirror; a bottom electrode disposed over the substrate; a top electrode facing thebottom electrode and having an electrode connection portion; a piezoelectric layer which is arranged above the bottom electrode and between the bottom electrode and the top electrode, wherein the edge of the top electrode is provided with a suspended wing structure and / or a bridge structure, and a gap is formed below the suspended wing structure and / or the bridge structure. The resonator also includes a fill layer that fills only a portion of the void. The invention further relates to a filter with the bulk acoustic wave resonator and electronic equipment with the filter.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a bulk acoustic wave resonator, a filter with the resonator, and an electronic device with the filter. Background technique [0002] Thin film bulk wave resonators made of piezoelectric thin films with longitudinal resonance in the thickness direction have become a viable alternative to surface acoustic wave devices and quartz crystal resonators in mobile phone communications and high-speed serial data applications. RF front-end bulk wave filter / duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, large power capacity, and strong anti-electrostatic discharge (ESD) capability. High frequency thin film bulk wave oscillator with ultra-low frequency temperature drift, low phase noise, low power consumption and wide bandwidth modulation range. In addition, these miniature thin-film resonators use CMOS-compatib...

Claims

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Application Information

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IPC IPC(8): H03H9/02H03H9/56H03H9/58
CPCH03H9/02015H03H9/02047H03H9/564H03H9/582
Inventor 杨清瑞庞慰张孟伦
Owner TIANJIN UNIV