Complementary structure synaptic device based on nanofluid interface type memristor and preparation thereof
A technology of fluid interface and synaptic devices, applied in the direction of electrical components, etc., can solve complex and other problems, and achieve the effect of enhancing the coexistence of inhibition
Active Publication Date: 2020-05-05
HUAZHONG UNIV OF SCI & TECH
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On the other hand, the design structure of the memristive neural network in the current academic circle is relatively complicated, and additional circuits or multi-layer complex auxiliary circuits are required to complete the simultaneous realization of enhanced and inhibitory synapses, so as to realize the corresponding functional algorithms; in terms of integrated circuit design , and it is rare to prepare enhanced and inhibitory synaptic devices at the same time under the same process flow
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Embodiment 1
[0046] Such as figure 1 As shown, the complementary structure synaptic device of the nanofluid interface type memristor in the present invention has a total of four liquid storage pools, and the liquid storage pools are respectively interconnected with the corresponding micron channel, and the two parallel micron channel There are parallel nano-channels perpendicular to the micro-channels between the channels, so that the micro-channels and nano-channels are interconnected, and the nano-channels on the silicon substrate and the micro-channels on the PDMS substrate can be obtained respectively through the semiconductor process. road.
[0047] KCl salt solution is injected into the left reservoir of the device, and the right reservoir is injected with ionic conductors such as [BMIM][PF 6 ]; in the first nanochannel, since the inner wall of the channel is SiO 2 material, the solid-liquid hydrolysis occurs with the KCl solution, so that the inner wall of the channel is negativel...
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Abstract
The invention belongs to the technical field of microelectronics and nanotechnology, and discloses a complementary structure synaptic device based on a nanofluid interface type memristor and preparation of the complementary structure synaptic device. The device comprises at least two parallel nano channels which are functionally divided into two types in total. After the nano channels with different function classifications are in contact with the first liquid, the wall surface has different positive and negative electrical properties, and the nano channels with the first and second function classifications show different ion selection trafficability to the first liquid and do not show ion selection trafficability to the second liquid. Under the action of an external electric field, the conductivity changes of the two types of functional nano channels are opposite, and the artificial synaptic device with a complementary structure is realized. According to the invention, through the overall matching effect of the first liquid, the second liquid and the two types of parallel functional nano channels, different liquid interface movements are generated in the nano channels under the same external electric field; enhanced and suppressed nano-fluid memristor units can be correspondingly obtained; and the complementary structure synaptic device is realized.
Description
technical field [0001] The invention belongs to the field of microelectronics and nanotechnology, and more specifically relates to a synaptic device with a complementary structure based on a nanofluid interface memristor and its preparation. Nanofluid interfacial memristors based on soluble solutions, such as KCl salt-based aqueous solutions and ionic conductors [BMIM][PF 6 ]’s nanofluid memristor, through the design of two different nanochannel materials and structures, the traditional semiconductor preparation process and process can be used to complete two types of synaptic memristors, the enhanced type and the inhibited type, on the same substrate The combination of the unit, and then obtained the complementary structure synaptic device based on the nanofluidic interface type memristor. Background technique [0002] With the reduction of the size of traditional semiconductor devices and the increase of the scale of integrated circuit design today, traditional integrated...
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Login to View More IPC IPC(8): H01L45/00
CPCH10N70/801H10N70/821H10N70/20H10N70/011
Inventor 缪向水何毓辉陈可欣
Owner HUAZHONG UNIV OF SCI & TECH