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Filling method of redundant metal

A filling method and technology of redundant graphics, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as large differences in the density of redundant graphics

Pending Publication Date: 2020-05-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a filling method of redundant graphics, to solve the problem that the density difference of redundant graphics filled is too large

Method used

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  • Filling method of redundant metal
  • Filling method of redundant metal
  • Filling method of redundant metal

Examples

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Embodiment 1

[0041] The present invention provides a filling method of redundant graphics, refer to figure 1 , figure 1 It is a flowchart of a method for filling redundant graphics in Embodiment 1 of the present invention. In this embodiment, the method for filling redundant graphics includes:

[0042] S10: providing a layout, the layout is provided with a main graphics area and redundant graphics areas around the main graphics area;

[0043] S20: providing at least three groups of redundant graphics to be filled, wherein, in each group, there is an interval between the redundant graphics;

[0044] S30: Calculate the pattern density of each group of redundant patterns in the redundant pattern area according to the parameters of the redundant patterns, wherein the parameters of the redundant patterns include: redundant pattern length, redundant pattern width and interval width;

[0045] S40: Fill each group of redundant graphics in the redundant graphics area sequentially in descending o...

Embodiment 2

[0055] In this example, refer to Figure 6 , Figure 6 It is a flowchart of a method for filling redundant graphics according to Embodiment 2 of the present invention, and the method for filling redundant graphics includes:

[0056] S10: providing a layout, the layout is provided with a main graphics area and redundant graphics areas around the main graphics area;

[0057] S20: providing at least three groups of redundant graphics to be filled, wherein, in each group, there is an interval between the redundant graphics;

[0058] S30: Calculate the pattern density of each group of redundant patterns in the redundant pattern area according to the parameters of the redundant patterns, wherein the parameters of the redundant patterns include: redundant pattern length, redundant pattern width and interval width;

[0059] S40: Divide the redundant graphic area into a first graphic area, a second graphic area to an n-th graphic area in the order from the redundant graphic area to ...

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Abstract

The invention provides a redundant graph filling method, which comprises the following steps of: providing a layout which is provided with a main graph region and a redundant graph region; providing at least three groups of redundant graphs to be filled; calculating the graph density of each group of redundant graphs in the redundant graph area; and sequentially filling each group of redundant graphs into the redundant graph area according to the sequence of the graph densities from large to small. According to the method, the redundant graph with high graph density is firstly filled, so thatthe effective graph density of the redundant graph area can be quickly improved; furthermore, the redundant graphs are filled according to the sequence of the graph densities from large to small, so that the graph density difference of the redundant graphs can be effectively reduced, the uniform and effective graph density on the whole wafer (a main graph region and a redundant graph region) is achieved, and the micro-load effect is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a redundant metal filling method. Background technique [0002] In the integrated circuit process, due to the difference in the density of the wafer, a pattern effect (pattern effect) occurs, which is the well-known micro-loading effect (micro-loading effect). The microloading effect is a phenomenon that occurs when exposure, etching, and / or polishing are performed simultaneously on higher density features and lower density features. Due to the difference in exposure / etching / polishing rate between different locations on the film, the amount of reaction generated by exposure / etching / polishing will become locally dense or sparse, and cause differences in etching / polishing rate or pattern size after exposure. uneven. Excessively large differences in the density of active patterns may cause significant and undesirable effects, such as pattern size errors and thi...

Claims

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Application Information

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IPC IPC(8): G06F30/392
Inventor 曹云于明
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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