Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for forming semiconductor memory

A memory and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of high manufacturing cost and complicated semiconductor memory manufacturing process, and achieve simplified manufacturing process, uniform pattern layout density, The effect of increasing graphics density

Active Publication Date: 2022-03-18
CHANGXIN MEMORY TECH INC
View PDF18 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the existing method for forming a semiconductor memory, when preparing the bit line and the peripheral gate layer of the peripheral transistor, it is usually necessary to form them separately in different process steps, which will inevitably lead to a relatively complicated manufacturing process of the semiconductor memory, and the preparation The cost is also higher

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming semiconductor memory
  • Method for forming semiconductor memory
  • Method for forming semiconductor memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0057] The method for forming the semiconductor memory proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0058] Preferred embodiments of the invention are shown in the following examples, it being understood that those skilled in the art may modify the invention described herein and still achieve the beneficial effects of the invention. Therefore, the following description should be understood as the broad knowledge of those skilled in the art, but not as a limitation of the present invention.

[0059] figure 1 It is a schematic flow chart of a method for formin...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
hardnessaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for forming a semiconductor memory. At the same time, the auxiliary line group and the peripheral film layer located on the periphery of the auxiliary line group are prepared, and the bit line pattern is further defined based on the auxiliary line group in the auxiliary line group, so that the peripheral gate pattern of the peripheral film layer and the bit line The line pattern is simultaneously copied into the conductive material layer to simultaneously form the peripheral gate layer and the bit line. In this way, the manufacturing process of the semiconductor memory can be effectively simplified, and the cost can be saved, and at the same time, the abnormal shape of the bit line at the edge position can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a semiconductor memory. Background technique [0002] A semiconductor memory (eg, dynamic random access memory, DRAM) generally includes a memory cell array for storing data, and peripheral circuits located around the memory cell array. Wherein, the memory cell array is composed of a plurality of memory cells arranged in an array in the memory array area, and the memory cells are also connected to a bit line; and, the peripheral circuit usually includes peripheral transistors. [0003] In the existing method for forming a semiconductor memory, when preparing the bit line and the peripheral gate layer of the peripheral transistor, it is usually necessary to form them separately in different process steps, which will inevitably lead to a relatively complicated manufacturing process of the semiconductor memory, and the preparation The cost is also higher...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8242H01L27/108
CPCH10B12/482H10B12/09
Inventor 宫光彩
Owner CHANGXIN MEMORY TECH INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com