Temperature control device and etching equipment

A technology of temperature control device and etching chamber, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems of over-etching or under-etching of etched substrates, large deviation of CDBias, and lower product yield, etc., to achieve Avoid etching process defects, ensure uniformity, and improve the effect of yield

Active Publication Date: 2020-05-12
BOE TECH GRP CO LTD +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the increase of the amount of condensed liquid medicine, the droplet will gradually increase, and finally will drop onto the etched substrate, so that the medicine at the position where the liquid medicine drops The concentration of the etching solution...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Temperature control device and etching equipment
  • Temperature control device and etching equipment
  • Temperature control device and etching equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The application will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain related inventions, rather than to limit the invention. It should also be noted that, for ease of description, only parts related to the invention are shown in the drawings.

[0032] It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

[0033] understandable, such as figure 1 As shown, in the etching process, using such as figure 1 The etching chamber shown is carried out, and the top of the etching chamber 1 is provided with a top plate 11 and a cover plate 12, and the top plate is usually a glass plate. During the etching pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a temperature control device and etching equipment. The device comprises a shell and a heating element arranged in the shell, wherein the shell is of an open structure, the shell is arranged on a top plate of the etching chamber, an opening of the shell faces the top plate, a temperature control cavity is formed between the top plate and the shell, and the heating element is used for heating gas in the temperature control cavity, so the temperature of the top plate of the etching chamber is close to the temperature of etching liquid in the etching chamber. According tothe embodiment of the invention, the gas in the cavity on the top plate of the etching chamber is heated through the heating element, so the top plate is heated, the temperature of the top plate is kept close to the temperature of the etching liquid in the etching chamber, and the volatile gas of the etching liquid is prevented from being condensed into liquid drops when meeting cold on the top plate of the etching chamber, thereby avoiding the etching process defect caused by falling of the liquid drops, guaranteeing the uniformity of an etching substrate, and increasing the yield of products.

Description

technical field [0001] The present application generally relates to the technical field of etching, and in particular relates to a temperature control device and etching equipment. Background technique [0002] In the etching process, in order to increase the etching rate, it is sometimes necessary to heat the chemical solution. During the etching process, the chemical solution in the etching chamber will volatilize. After the volatilized gas moves to the top of the etching chamber, it will be liquefied and condensed in the top of the etching chamber to form liquid droplets. [0003] As the amount of condensed liquid medicine increases, the droplet will gradually increase, and will eventually drop onto the etched substrate, causing the concentration of the liquid medicine at the drop position to change, and the uneven concentration of the etching solution will lead to Over-etching or under-etching of the etched substrate can lead to excessive deviation of CD Bias from the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/67
CPCH01L21/67248H01L21/67075
Inventor 刘彦修任志明李发业周建李显杰田龙宇晏熙
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products