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A spectral selective radiation infrared stealth material and its preparation method
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A stealth material and selective technology, applied in chemical instruments and methods, optics, optical components, etc., can solve the problems of immature application of selective radiation materials, complex structure and process, increased material stress, etc., and achieve convenient large-area The effect of preparation and application, low equipment requirements and simple structure
Active Publication Date: 2022-01-04
NAT UNIV OF DEFENSE TECH
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However, the application of selective radiation materials in the field of infrared stealth is still immature
Chinese patent CN104865617A discloses an infrared stealth film with spectral selectivity and low emissivity and its preparation method. The infrared stealth film is composed of high refractive index material germanium and low refractive index material magnesium fluoride, but the material structure and The process is relatively complicated, the number of film layers is large and the film is thick, the internal stress of the material increases, and the structure of the material is easily damaged in a high temperature environment
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Embodiment 1
[0033] A kind of spectrum selective radiation infrared stealth material of the present invention, structure such as figure 1 As shown, it includes silicon substrate 1, aluminum nitride layer 2 (thickness 1mm), first germanium layer 3 (thickness 313nm), magnesium fluoride layer 4 (thickness 117nm) and second germanium layer 5 (thickness 313nm).
[0034] The preparation method of the spectrally selective radiation infrared stealth material in this embodiment comprises the following steps:
[0035] (1) Clean the silicon wafer with deionized water, then soak it in absolute ethanol for ultrasonic cleaning, and dry it;
[0036] (2) High-purity aluminum nitride powder is used as the raw material, and the sintering aid is yttrium oxide (Y 2 o 3 ) and Al 2 Y 4 o 9 , the raw materials and sintering aids, conventional binders and solvents are prepared to obtain casting slurry; the casting tape with uniform thickness is obtained by scraper casting method, and then die-cutting, lamina...
Embodiment 2
[0041] A spectrally selective radiation infrared stealth material of the present invention, comprising an aluminum sheet substrate, an aluminum nitride layer (thickness 1.5mm), a first silicon layer (thickness 345nm), a zinc sulfide layer (thickness 227nm) and a second silicon layer (thickness 342nm).
[0042] The preparation method of the spectrally selective radiation infrared stealth material in this embodiment comprises the following steps:
[0043] (1) Clean the aluminum sheet with deionized water first, then soak it in absolute ethanol for ultrasonic cleaning, and dry it;
[0044] (2) Using the magnetron sputtering method (DC reactive sputtering, power 200W, deposition temperature at room temperature, flow ratio of nitrogen and argon: 1:2, deposition pressure: 0.8Pa), prepare a layer of thickness 1.5 on the surface of the aluminum sheet mm of aluminum nitride layer;
[0045] (3) Using magnetron sputtering technology, first deposit a silicon film with a thickness of 345...
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Abstract
The invention discloses a spectrally selective radiation infrared stealth material, which sequentially includes a substrate, an aluminum nitride layer and a dielectric layer; the dielectric layer is composed of several dielectric layers A and B arranged alternately; the dielectric layer A The material is any one of germanium, tellurium, and silicon, and the material of the dielectric layer B is any one of zinc sulfide, zinc selenide, magnesium fluoride, barium fluoride, and calcium fluoride. The preparation method of the material: (1) cleaning and drying the substrate; (2) preparing a layer of aluminum nitride layer on the surface of the substrate by magnetron sputtering or casting method; (3) using magnetron sputtering or electronic Beam evaporation, first deposit a layer of dielectric layer A on the aluminum nitride layer, and then deposit a layer of dielectric layer B, repeatedly depositing dielectric layer A and dielectric layer B alternately until the designed number of layers, and complete the preparation of infrared stealth materials. The spectrally selective radiation infrared stealth material of the present invention takes into account the requirements of low emissivity and radiation heat dissipation, and is of great significance for better realizing infrared stealth.
Description
technical field [0001] The invention belongs to the field of new materials, in particular to a spectral selective radiation infrared stealth material and a preparation method thereof. Background technique [0002] With the rapid development of photoelectric technology, various reconnaissance techniques have emerged as the times require. Stealth technology plays an increasingly important role in modern warfare. In various stealth technologies, infrared stealth occupies a very important position. Infrared stealth refers to eliminating or reducing the difference in the radiation characteristics of the two atmospheric windows (3.0μm~5.0μm, 8.0μm~14.0μm) in the middle and far infrared bands between the target and the background. [0003] At present, the use of low-emissivity infrared stealth materials is still the most important way of infrared stealth. Traditional infrared low-emissivity materials have low emissivity in the entire infrared band, covering the 3.0 μm to 5.0 μm ...
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