Embedded gate structure and manufacturing method thereof
A gate structure and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems affecting the normal use of semiconductor integrated circuits, the gate threshold voltage becomes smaller, the density of functional components increases, etc., and the size can be reduced. , the effect of increasing the threshold voltage and improving the performance
Pending Publication Date: 2020-05-19
CHANGXIN MEMORY TECH INC
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Problems solved by technology
Therefore, while the size of semiconductor integrated circuits is shrinking, its short-channel effect is becoming more and more obvious, which in turn causes the threshold voltage of the gate to become smaller, and the increase in the density of functional elements is also likely to cause a problem in the overlap area between the drain and the gate. Drain leakage current occurs, which affects the normal use of semiconductor integrated circuits
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[0051] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.
[0052] see Figure 1-22 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily ...
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Abstract
The invention discloses an embedded gate structure and a manufacturing method thereof. The embedded gate structure comprises a semiconductor substrate, a gate trench is formed on the semiconductor sink, a dielectric layer is arranged on the semiconductor substrate, in each gate trench, the first conductive metal layers are distributed along the two side walls of the gate trench, the first conductive metal layers are in a clamping shape, and the second conductive metal layer is clamped between the first conductive metal layers on the two sides. According to the invention, the drain leakage current caused by the gate can be reduced, the stability of the semiconductor device is improved, and the efficiency of the semiconductor device is improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a buried gate structure and a manufacturing method thereof. Background technique [0002] With the advancement of technology, the volume of semiconductor integrated circuits is getting smaller and smaller. While the size of semiconductor integrated circuits is gradually shrinking, the density of functional elements (interconnection elements per unit chip area) is gradually increasing. Therefore, while the size of semiconductor integrated circuits is shrinking, its short-channel effect is becoming more and more obvious, which in turn causes the threshold voltage of the gate to become smaller, and the increase in the density of functional elements is also likely to cause a problem in the overlap area between the drain and the gate. Drain leakage current occurs, affecting the normal use of semiconductor integrated circuits. Contents of the invention [0003] In view of the...
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Login to View More IPC IPC(8): H01L29/423H01L21/28
CPCH01L29/42312H01L29/4236H01L29/401H01L29/42372
Inventor 冯大伟
Owner CHANGXIN MEMORY TECH INC