Wavy pattern of integrated circuit and method of forming same, integrated circuit

Abstract

The present application relates to the technical field of semiconductor fabrication, and in particular, to a method for forming a wavy pattern of an integrated circuit, a wavy pattern of an integrated circuit, and an integrated circuit, wherein the method for forming the wavy pattern includes: forming a wavy pattern on a substrate The first pattern and the second pattern, the first pattern includes a plurality of first bar-shaped patterns arranged at intervals in the first direction, and the second pattern includes a plurality of first bar-shaped patterns arranged at intervals in the second direction and connected to the first bar-shaped pattern Intersecting second strip pattern; forming a third pattern on the substrate, the third pattern is located on the first pattern and the second pattern, and the third pattern includes a plurality of spaced in the third direction and is arranged with the first strip pattern and the second pattern. The third bar pattern where the second bar pattern intersects; the first bar pattern and the second bar pattern are cut off by using the third bar pattern, so that a wavy pattern is formed between adjacent third bar patterns. Such a design can reduce the disconnection of the wavy pattern and improve the manufacturing yield of the integrated circuit.

Description

technical field [0001] The present application relates to the technical field of semiconductor manufacturing, in particular, to a method for forming a wave-shaped pattern of an integrated circuit, a wave-shaped pattern of an integrated circuit, and the integrated circuit. Background technique [0002] With the development of integrated circuit manufacturing, the integration level is getting higher and higher, and the number of transistors contained in a unit area is also increasing rapidly. The main index to measure the degree of integration in the manufacturing process is the resolution of the photolithography process, which is used to distinguish the ability of the feature pattern close to the surface of the silicon wafer. [0003] Currently, the resolution R is generally measured by a critical dimension (CD, Critical Dimension). Wherein, the smaller the critical dimension formed, the better the resolution. In order to obtain a smaller critical dimension, it can be impro...

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Problems solved by technology

[0004] In related technologies, one-time patterning process is usually used to process wavy patterns, but in order to ensure good resolution, the value of k1 is usually small, so when using one-time patterning process to process wavy patterns, it is easy to appear at the bend of the wavy pattern. The case of disconnection reduces the manufacturing yield of integrated circuits

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