Horizontal detection mechanism and scanning electron microscope

An electron microscope, level detection technology, applied in circuits, discharge tubes, electrical components, etc., can solve the problems of not being able to judge whether the IMS is in the best position, the IMS sensor is not easy to adjust, and the working stability is not good, so as to avoid downtime. Too long time, saving machine space occupancy rate, and easy implementation

Pending Publication Date: 2020-05-29
CHANGXIN MEMORY TECH INC
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, when the machine is stable, once the IMS sensor is triggered, the position of the IMS must be adjusted, and the IMS sensor is not easy to adjust. The adjustment process takes 3 hours or longer. The machine downtime is too long, which seriously affects the output of the machine. After the adjustment, there are uncertain factors, that is, it is impossible to judge whether the IMS is in the best position, and whether it will be triggered later
[0004] Therefore, it is necessary to provide a sensing device to solve the problems of the above-mentioned IMS sensor such as long adjustment time and poor working stability.

Method used

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  • Horizontal detection mechanism and scanning electron microscope
  • Horizontal detection mechanism and scanning electron microscope
  • Horizontal detection mechanism and scanning electron microscope

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Embodiment Construction

[0028] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. In the drawings, the thicknesses of regions and layers may be exaggerated for clarity. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed descriptions will be omitted.

[0029] Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the invention. However, one skilled in the art will appreciate that th...

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Abstract

The invention provides a horizontal detection mechanism and a scanning electron microscope. The horizontal detection mechanism comprises a shell, an elastic part, a pressure sensor and a triggering part; a cavity is defined in the shell; the elastic part is accommodated in the cavity; at least one end of the elastic part is provided with the pressure sensor; the triggering part is provided with afirst end and a second end which are opposite to each other; the first end is located outside the cavity; the second end is located in the cavity; and when the first end is externally stressed towardsthe second end, the second end extrudes the elastic part, so that the pressure borne by the elastic part is changed, and the pressure sensor can sense the pressure change of the elastic part.

Description

technical field [0001] The invention relates to the field of device measurement, in particular to a scanning electron microscope and a level detection mechanism thereof. Background technique [0002] Scanning Electron Microscope (SEM for short) is a material characterization technology equipment mainly used in the observation and imaging of material surface topography. The working principle of SEM is to scan the sample with a very thin electron beam, and excite secondary electrons on the surface of the sample. The number of secondary electrons is related to the incident angle of the electron beam, that is to say, to the surface structure of the sample. The secondary electrons are collected by the detector, where they are converted into optical signals by the scintillator, and then converted into electrical signals by photomultiplier tubes and amplifiers to control the intensity of the electron beam on the fluorescent screen, displaying a scanning image synchronized with the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/244H01J37/28
CPCH01J37/244H01J37/28
Inventor 黄子朋
Owner CHANGXIN MEMORY TECH INC
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