Air intake device for plasma processing equipment

Abstract

An air intake device for plasma processing equipment, comprising: a chamber cover (1), covering directly above the reaction chamber, with separate air intake nozzles (4, 5) respectively arranged on both sides, respectively connected to external Two channels of process gas; the coupling window (2) is located above the interior of the chamber cover (1), and a sealing ring (6) is arranged between the lower surface and the chamber cover (1), so that the chamber cover (1) and the reaction chamber A closed vacuum space is formed between them; and a partitioned gas uniform plate (3), located inside the chamber cover (1), the upper surface is facing the coupling window (2), and the lower surface faces the interior of the reaction chamber, and the reaction gas enters through the lower surface reaction chamber. The invention can realize the independent passage of two gases into the reaction chamber, and accurately and flexibly control the mixing ratio, with high control precision, and greatly improves the uniformity of plasma treatment processes such as etching and coating processes , and the structure is simple, easy to disassemble.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an air intake device of plasma processing equipment. Background technique [0002] Plasma treatment is the most important method in microfabrication at present, and the rapid development of microelectronics promotes its continuous development. With the advancement of technology, chip manufacturing has higher and higher requirements for plasma etching and coating processes. One of the main parameters describing the process effect is uniformity, and the most important factor affecting uniformity is the plasma in the reaction chamber. Distribution, the structure of the chamber and the design of the inlet part together determine the distribution of the plasma. In the current plasma process system, the interior of the reaction chamber is mostly circular, and the gas extraction port structure is located on the side. The reaction gas enters the uniform gas structure above the ch...

AI Technical Summary

Problems solved by technology

In the current plasma process system, the interior of the reaction chamber is mostly circular, and the gas extraction port structure is located on the side. The reaction gas enters the uniform gas structure above the chamber through the inlet pipe, and then enters the chamber uniformly. , this structure is likely to cause that the surface of the substrate cannot evenly contact the reactive gas when the pumping system sucks the gas from the pumping port during the process. Doesn't work well and ends up affecting uniformity

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