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Anti-potential induced attenuation device and voltage boosting system

An attenuation device, a technology of voltage boosting, applied in the field of power grids

Pending Publication Date: 2020-06-05
SINENG ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The embodiment of the present invention provides an anti-potential-induced attenuation device and a voltage raising system to select and raise any potential point of the power grid to effectively solve the problem of PID attenuation of the photovoltaic panel, so as to improve the service life of the photovoltaic module and ensure the stability of the system. Stable operation

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  • Anti-potential induced attenuation device and voltage boosting system
  • Anti-potential induced attenuation device and voltage boosting system
  • Anti-potential induced attenuation device and voltage boosting system

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Embodiment Construction

[0035] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only some structures related to the present invention are shown in the drawings but not all structures.

[0036] An embodiment of the present invention provides an anti-potential-induced attenuation device, figure 1 It is a schematic structural diagram of a voltage boosting system provided by an embodiment of the present invention, refer to figure 1 The anti-potential induced attenuation device 1 is connected to the AC power grid connected to the output end of the converter 3 of the voltage boosting system, and the device includes:

[0037] A sampling and control module 10, the sampling and control module 10 is used ...

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Abstract

The embodiment of the invention discloses an anti-potential induced attenuation device and a voltage boosting system. The anti-potential induced attenuation device is connected to an alternating-current power grid connected with the output end of a converter of a voltage boosting system, and comprises a sampling and control module used for sampling the voltage of the alternating-current power gridand generating a conduction execution command according to the voltage of the alternating-current power grid; a grounding module, wherein the grounding mode of the grounding module comprises at leastone of direct grounding and indirect grounding, wherein the grounding module can output at least one preset potential; and a potential selection module connected between the power grid and the grounding module, wherein the potential selection module comprises a switch group, and the potential selection module is used for gating any phase of the alternating current power grid with the grounding module according to the conduction execution command. According to the technical scheme, any potential point of the power grid can be lifted, the PID attenuation problem of the photovoltaic cell panel is effectively solved, the service life of the photovoltaic module is prolonged, and stable operation of a voltage lifting system is guaranteed.

Description

technical field [0001] The embodiments of the present invention relate to the technical field of power grids, in particular to an anti-potential induced attenuation device and a voltage boosting system. Background technique [0002] With the continuous development of new energy sources, the application of crystalline silicon components is becoming more and more extensive. However, under the action of high voltage for a long time, the phenomenon of Potential Induced Degradation (PID) will occur: there is a leakage current between the glass and the packaging material, and a large amount of charge accumulates on the surface of the cell, which makes the passivation effect of the cell surface Deterioration, resulting in lower fill factor (FF), short circuit current (Isc), and open circuit voltage (Voc). The performance of the components is lower than the design standard. In severe cases, it can cause the power of a component to attenuate by more than 50%, thus affecting the powe...

Claims

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Application Information

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IPC IPC(8): H02S40/30H02J3/38
CPCH02S40/30Y02E10/50
Inventor 夏孝云郁成龙
Owner SINENG ELECTRIC CO LTD