Semiconductor structure and method for manufacturing same
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of increased energy consumption of metal contact resistance and other issues
Inactive Publication Date: 2020-06-16
NAN YA TECH
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- Description
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Problems solved by technology
However, the configuration of conventional semiconductor structures can also lead to some problems
Method used
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[0062] The following description of the invention is accompanied by the accompanying drawings, which are incorporated in and constitute a part of this specification, illustrating an embodiment of the invention to which, however, the invention is not limited. In addition, the following embodiments can be properly integrated to complete another embodiment.
[0063] "An embodiment," "an embodiment," "an exemplary embodiment," "another embodiment," "another embodiment," etc., mean that the described embodiments of the invention may include a particular feature, structure, or characteristic, however Not every embodiment must include the particular feature, structure or characteristic. Also, repeated use of the phrase "in an embodiment" does not necessarily refer to the same embodiment, but could be.
[0064] The terms used herein are only used to describe specific embodiments, and are not used to limit the concept of the present invention. As used herein, the singular forms "a" a...
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The present disclosure relates to a semiconductor structure and a method for manufacturing the same. The semiconductor structure includes a first semiconductor layer, a second semiconductor layer, anda first, a second and a third bonding conductors. The first semiconductor layer includes a first top surface. The second semiconductor layer is disposed over the first semiconductor layer, and the second semiconductor layer includes a second top surface. The first bonding conductor is disposed over the first top surface. The second bonding conductor is disposed over the second top surface. The third bonding conductor is in contact with the first bonding conductor and the second bonding conductor, the first bonding conductor is different from the second bonding conductor, and the third bondingconductor includes a silicide material formed from the first bonding conductor and the second bonding conductor.
Description
[0001] This application claims priority and the benefit of U.S. Provisional Application No. 62 / 776,174, filed December 6, 2018, and U.S. Formal Application No. 16 / 250,676, filed January 17, 2019, which U.S. Provisional The contents of the application and the formal U.S. application are hereby incorporated by reference in their entirety technical field [0002] The invention relates to a semiconductor structure and a manufacturing method thereof, in particular to a semiconductor structure with a stacked structure and a manufacturing method thereof. Background technique [0003] Semiconductor devices are essential devices in many modern devices. With the advancement of technology, semiconductor devices are gradually miniaturized, and at the same time, the integration density of various electronic components (such as transistors, diodes, resistors, capacitors, etc.) is also gradually improved. In view of the miniaturization of semiconductor devices, stacked semiconductor struc...
Claims
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IPC IPC(8): H01L21/60H01L21/768H01L23/48H01L23/488H01L23/528
CPCH01L24/81H01L21/76805H01L21/76898H01L23/5283H01L23/481H01L24/16H01L2224/16148H01L2224/812H01L2224/05547H01L2224/80895H01L2224/80896H01L2224/80948H01L2224/80357H01L2224/8083H01L2224/056H01L2224/05684H01L2224/05657H01L2224/05655H01L2224/05666H01L2224/0568H01L2224/08501H01L24/05H01L24/08H01L24/80H01L25/18H01L25/16H01L25/0657H01L25/50H01L2225/06541H01L2225/06572H01L2224/8034H01L2224/08145H01L2924/00014H01L2924/01014H01L2924/0476H01L2924/01074H01L2924/0479H01L2924/01027H01L2924/0474H01L2924/01022H01L2924/0471H01L2924/01028H01L2924/01042H01L2224/81359H01L2224/81893H01L2225/06517
Inventor 蔡宏奇
Owner NAN YA TECH