Check patentability & draft patents in minutes with Patsnap Eureka AI!

Correction method of photomask pattern

A mask pattern and photomask technology, which is applied in the field of photomask pattern correction, and can solve problems such as yield decline and overlay errors.

Active Publication Date: 2020-06-23
XIA TAI XIN SEMICON QING DAO LTD
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example: a small contact area on the pattern will increase (eg: the pattern is not properly aligned) overlay error (Overlay Error) and lead to a decrease in yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Correction method of photomask pattern
  • Correction method of photomask pattern
  • Correction method of photomask pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention.

[0043] Some embodiments of the present invention will be described in detail below in conju...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of correcting a designed pattern of a photomask for fabricating a semiconductor device is provided. The method comprises steps that a substrate of the photomask is provided; a first mask pattern of the photomask designed to form a first contact pattern on the substrate is conceived; wherein the first mask pattern includes a plurality of mask holes each having a hole size. The first mask pattern is adjusted to expand the hole size along a horizontal direction and rotate the mask holes for conceiving a second mask pattern of the photomask designed to form a second contact pattern havinga plurality of contact holes. A plurality of device gaps between the contact holes is verified, and an overlay margin between the second contact pattern and an adjacent pattern in the semiconductor device is verified for determining whether the second contact pattern is the designed pattern of the photomask.

Description

technical field [0001] The present invention relates to a modification of a photomask pattern for manufacturing a semiconductor device. Still further, the present invention relates to a photomask pattern correction method for manufacturing a semiconductor device using a corrected photomask pattern. Background technique [0002] Overlay control is very important in forming contact holes during the photolithography process in semiconductor manufacturing. In particular, wafers are manufactured through a series of multiple processes. Each of the plurality of processes can form a pattern on the wafer to produce different circuits including transistors or contacts. To ensure that all circuits work, the patterns on the wafer must be properly aligned. In other words, contacts, lines, and transistors need to be precisely aligned or overlap each other. Overlay control can be regarded as the control of pattern-to-pattern alignment, which plays a crucial role in monitoring the layer...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/36G03F1/42H01L21/768
CPCG03F1/36G03F1/42H01L21/76816H01L21/76805
Inventor 梁时元刘智龙权炳仁
Owner XIA TAI XIN SEMICON QING DAO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com