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Grinding wheel for gallium arsenide crystal thinning, preparation method and application

A gallium arsenide and grinding wheel technology, applied in manufacturing tools, metal processing equipment, grinding/polishing equipment, etc., can solve the problems of high grinding resistance, high processing difficulty, reduced production efficiency, etc. The effect of reducing the surface damage layer and improving the surface quality

Active Publication Date: 2021-04-02
ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with traditional silicon semiconductor materials, gallium arsenide materials are harder than silicon materials, and because of their structural relationship, they are typical brittle materials, which are easily damaged during the processing of materials and their products, and the processing is difficult. low rate
[0003] Gallium arsenide crystal grinding produces a lot of grinding debris, which is easy to block the grinding wheel, resulting in problems such as the workpiece grinding wheel is not sharp, and the grinding resistance is large. However, gallium arsenide itself is a brittle material, which produces grinding debris and low yield
At the same time, the rigid contact of ordinary grinding wheel grinding gallium arsenide causes sub-damage and residual surface stress on the surface layer of gallium arsenide wafer, which increases the time of subsequent polishing process and reduces production efficiency

Method used

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  • Grinding wheel for gallium arsenide crystal thinning, preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A grinding wheel for gallium arsenide crystal thinning, its components include: 10% diamond abrasive, 42% polyimide resin powder, 10% azo foaming agent, 10% calcium fluoride, disulfide Molybdenum 10%, zinc oxide 10%, white corundum 8%.

[0027] The azo foaming agent has been processed. The treatment method is: dissolve the azo foaming agent in dimethylformamide solvent, then put it in a vacuum drying oven at 80°C for 2 hours, pulverize it with a pulverizer for 2 hours, and pass through liquid nitrogen. Cooling treatment, milling with a planetary ball mill for 4 hours, and finally sieving with 300# and 400# standard sieves to obtain a foaming agent with a particle size distribution of 50-60 μm after treatment.

[0028] The preparation method of the grinding wheel for gallium arsenide crystal thinning comprises the following steps:

[0029] (1) Put the treated foaming agent and polyimide resin powder into a planetary mixer for ball mixing for 1 hour, and then pass throug...

Embodiment 2

[0034] A grinding wheel for gallium arsenide crystal thinning, its components include: 25% diamond abrasive, 25% polyimide resin powder, 8% azo foaming agent, 20% calcium fluoride, disulfide Molybdenum 4%, zinc oxide 6%, white corundum 12%.

[0035] The azo-type foaming agent is processed, and the treatment method is: dissolve the azo-type foaming agent in dimethylformamide solvent, then put it into a vacuum drying oven at 80°C for 2 hours, pulverize it with a pulverizer for 2 hours, and Cooling treatment with liquid nitrogen, milling with a planetary ball mill for 4 hours, and finally sieving with 300# and 400# standard sieves to obtain a foaming agent with a particle size distribution of 50-60 μm after treatment.

[0036] The preparation method of the grinding wheel for gallium arsenide crystal thinning comprises the following steps:

[0037] (1) Put the treated foaming agent and polyimide resin powder into a planetary mixer for ball mixing for 1 hour, and then pass through...

Embodiment 3

[0043] A grinding wheel for gallium arsenide crystal thinning, its components include: 35% diamond abrasive, 15% polyimide resin powder, 20% azo foaming agent, 5% calcium fluoride, disulfide Molybdenum 3%, zinc oxide 12%, white corundum 10%.

[0044] The azo-type foaming agent is processed, and the treatment method is: dissolve the azo-type foaming agent in dimethylformamide solvent, then put it into a vacuum drying oven at 80 degrees for 2 hours, pulverize it with a pulverizer for 2 hours, and Cooling treatment with liquid nitrogen, milling with a planetary ball mill for 4 hours, and finally sieving with 300# and 400# standard sieves to obtain a foaming agent with a particle size distribution of 50-60 μm after treatment.

[0045] The preparation method of the grinding wheel for gallium arsenide crystal thinning comprises the following steps:

[0046] (1) Put the processed foaming agent and polyimide resin powder into the planetary mixer for ball mixing for 1 hour, then pass ...

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Abstract

The invention provides a grinding wheel for gallium arsenide crystal thinning, a preparation method and application. The grinding wheel is provided with a porous structure, and is prepared from the following raw material of, in percentage by weight, 10%-35% of diamond abrasive, 15%-42% of polyimide resin powder, 5%-20% of foaming agent, 5%-20% of calcium fluoride, 3%-15% of molybdenum disulfide, 8%-30% of white corundum and 5%-12% of zinc oxide. The grinding wheel is of the porous structure, a binding agent bridge established through the porous structure generates effective breakage during grinding, the self-sharpening performance of the grinding wheel is good, and the trimming frequency is reduced; a damaged layer on the surface of a gallium arsenide wafer is reduced, pressure is reducedfor a subsequent polishing process, and the periodic production efficiency is improved; and a molybdenum disulfide solid lubricant material is added into a grinding wheel system so that the friction coefficient of the grinding wheel can be reduced, the grinding heat is effectively reduced, the probability of workpiece burning is reduced, and the surface quality of the gallium arsenide wafer is improved.

Description

technical field [0001] The invention relates to the field of superhard abrasives, in particular to a grinding wheel for gallium arsenide crystal thinning, a preparation method and application. Background technique [0002] Gallium arsenide single crystal is the second-generation semiconductor material developed after single crystal silicon. It has the advantages of wide band gap, high electron mobility, good photoelectric characteristics, radiation resistance, and high-frequency performance. Indispensable basic materials for microelectronics and optoelectronics in the fields of aerospace, energy conservation and environmental protection. Compared with traditional silicon semiconductor materials, gallium arsenide materials are harder than silicon materials, and because of their structural relationship, they are typical brittle materials, which are easily damaged during the processing of materials and their products, and the processing is difficult. low rate. [0003] Galliu...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D3/32B24D3/34B24D18/00C08J9/10C08L79/08C08K3/00C08K3/04C08K3/16C08K3/30C08K3/22
CPCB24D3/32B24D3/344B24D18/0009C08J9/0066C08J9/103C08J2203/04C08J2379/08C08K3/00C08K3/04C08K2003/162C08K2003/2227C08K2003/2296C08K2003/3009
Inventor 王礼华张高亮赵延军钱灌文曹剑锋
Owner ZHENGZHOU RES INST FOR ABRASIVES & GRINDING CO LTD
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