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Memory read data test circuit structure and design method thereof

A technology of data testing and circuit structure, applied in static memory, read-only memory, digital memory information, etc., can solve problems such as difficult and complex timing balance

Pending Publication Date: 2020-07-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] This application provides a memory read data test circuit structure and its design method, which can solve the complex and difficult problem of ensuring high-precision timing balance in related technologies

Method used

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  • Memory read data test circuit structure and design method thereof
  • Memory read data test circuit structure and design method thereof

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Embodiment Construction

[0028] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0029] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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PUM

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Abstract

The invention relates to the technical field of semiconductor integrated circuits, in particular to a memory read data test circuit structure and a design method thereof. The structure comprises a read signal path which comprises a clock gating unit and a first combinational logic circuit unit; the clock end of the clock gating unit is connected with a synchronous clock signal; the address path comprises an address register unit, a logic control circuit unit, an address latch unit and a second combinational logic circuit unit; wherein the clock end of the address register unit is connected with a synchronous clock signal, the data output end of the address register unit is connected with the input end of the logic control circuit unit, the output end of the logic control circuit unit is connected with the data input end of the address latch unit, and the clock end of the address latch unit is connected with the synchronous clock signal. By means of the read signal generation step, theaddress signal generation step and the address latch step, a synchronous clock is adopted, and the problem that in the related technology, it is complex and difficult to guarantee high-precision timesequence balance can be solved.

Description

technical field [0001] The present application relates to the technical field of semiconductor integrated circuits, in particular to a memory read data test circuit structure and a design method thereof. Background technique [0002] The memory is the main medium used for data storage in the computer, and the reading and writing speed of the memory greatly affects the working speed of the computer. In recent years, with the rapid development of Internet technologies such as cloud computing, the requirements for the read and write speed of the memory are getting higher and higher; the memory read data circuit is used to read the data stored in the storage unit corresponding to the specific address according to the read signal. data. [0003] When reading data on a specific address according to the read signal, it is necessary to ensure that the read signal transmitted on the read signal path and the address signal transmitted on the address path arrive at the memory at the s...

Claims

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Application Information

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IPC IPC(8): G11C7/22G11C16/26G11C16/32
CPCG11C7/22G11C16/26G11C16/32
Inventor 周喆徐佳斌
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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