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IGBT device and preparation method of IGBT device

A device and substrate technology, which is applied in the field of preparation of insulated gate bipolar transistor devices and IGBT devices, can solve problems such as poor stability and poor top metal topography.

Pending Publication Date: 2020-07-03
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present application provides an IGBT device and a preparation method of the IGBT device, which can solve the problem of poor stability caused by the poor morphology of the top layer metal of the IGBT device provided in the related art

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  • IGBT device and preparation method of IGBT device
  • IGBT device and preparation method of IGBT device
  • IGBT device and preparation method of IGBT device

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Embodiment Construction

[0040] The technical solutions in this application will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0041] In the description of this application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" etc. The indicated orientation or positional relationship is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, use a specific orientati...

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Abstract

The invention discloses an IGBT device and a preparation method of the IGBT device. The device comprises: a substrate, which is provided with trench-type gates; an interlayer dielectric, which is formed on the substrate; and a top metal layer, which is formed on the interlayer dielectric, wherein in the interlayer dielectric and the substrate, at least two contact through holes are formed betweenthe trench type gates, and each contact through hole of the at least two contact through holes is connected with the top metal layer and the substrate. According to the invention, at least two contactholes are arranged between the deep trench type gates of the IGBT device and are used for leading-out; the width of each contact hole in the at least two contact holes is smaller than the width of asingle contact hole, and the at least two contact holes are formed, so the top metal layer on the upper layer can be distributed more uniformly in a transverse direction; and thus, the surface fluctuation of the top metal layer can be relatively small, good shape is obtained, and the stability of the IGBT device is improved.

Description

technical field [0001] The present application relates to the field of semiconductor technology, in particular to an insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT) device and a method for preparing the IGBT device. Background technique [0002] The IGBT device is a composite fully-controlled voltage-driven power semiconductor composed of a bipolar junction transistor (BJT) device and a metal-oxide-semiconductor field-effect transistor (MOSFET) device. The device has the advantages of high input impedance of a MOSFET device and low turn-on voltage drop of a power transistor (giant transistor, GTR) device. As the core device in new energy power electronic products, IGBT devices have transformed from traditional product fields (such as white goods, industrial frequency conversion, welding machines, etc.) to new product fields (such as new energy vehicles) in recent years. [0003] refer to figure 1 , which shows a schematic cross-sectional view of...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/7397H01L29/66348
Inventor 潘嘉杨继业黄璇
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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