Equal-gap gradient increasing concentric circle type double-sided silicon drift detector and design method thereof

Abstract

The invention discloses an equal-gap gradient increasing concentric circle type double-sided silicon drift detector and a design method thereof. The equal-gap gradient increasing concentric circle type double-sided silicon drift detector comprises a silicon substrate, a front concentric circle type circular cathode ring is etched on the upper surface of the silicon substrate, and a reverse concentric circular cathode ring is etched on the lower surface of the silicon substrate. Each of the front concentric circle type circular cathode ring and the back concentric circle type circular cathode ring consists of a plurality of circular cathode rings which are sequentially sleeved from inside to outside. The gaps between two adjacent circular cathode rings in the two circular cathode rings areequal, and the distances between the two adjacent circular cathode rings are sequentially increased in a gradient manner from inside to outside, specifically, the distances are increased in a gradientmanner of power of two thirds of the inner radius of the internal circular cathode ring. The front concentric circle type circular cathode ring is the same in structure and size, and a front anode electrode is etched in the first ring. The problems that an existing SDD unit is small in area, large in array splicing difficulty and high in cost are solved.

Description

technical field [0001] The invention belongs to the technical field of pulsar X-ray detection, and relates to a design method of a concentric circular cylindrical double-sided silicon drift detector with a large-area equal gap and a gradient increasing by the square of the radius. Background technique [0002] With the development of science and technology, the development of semiconductor materials and process technology is advancing by leaps and bounds, the traditional detector technology is becoming more and more perfect, and more and more new material semiconductor detectors have entered people's field of vision. Among a large number of semiconductor detectors, silicon detectors are widely used in high-energy physics, nuclear physics and other fields because of their superior performance and mature and advanced process technology. At present, in the research field of silicon detectors, the effects of parameters such as depletion voltage, capacitance, dark current, and ch...

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Problems solved by technology

[0003] The purpose of the embodiments of the present invention is to provide an equal-gap gradient-increasing concentric double-sided silicon drift detector to solve the problem that the existing SDD unit area is small and it is difficult and costly to splice into an SDD array, and the existing SDD The problem that electrons cannot drift smoothly to the cathode

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