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Semiconductor structure and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low hole concentration and poor vertical conductivity, and achieve the effect of increasing hole concentration and vertical conductivity

Active Publication Date: 2020-07-03
GUANGDONG INST OF SEMICON IND TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of this application is to provide a semiconductor structure to solve the problems of low hole concentration and poor vertical conductivity of the p-type AlGaN semiconductor structure in the prior art
[0006] Another object of the present application is to provide a semiconductor structure manufacturing method to solve the problems of low hole concentration and poor vertical conductivity of the p-type AlGaN semiconductor structure in the prior art

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0046] In order to make the purposes, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments It is a part of the embodiments of this application, not all of them. The components of the embodiments of the application generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0047] Accordingly, the following detailed description of the embodiments of the application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of the application. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art w...

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Abstract

The invention provides a semiconductor structure and a manufacturing method thereof, and relates to the technical field of semiconductor material preparation. The semiconductor structure comprises a substrate, a template layer which is connected with the growth surface of the substrate, wherein the surface of the template layer is a non-parallel macro step surface, and a P-type doped Al < x > Ga <1-x > N / Al < y > Ga < 1-y > N superlattice layer which is connected with the macro step surface, x is not equal to y, and Al components of the P-type doped Al < x > Ga < 1-x > N / Al < y > Ga < 1-y > Nsuperlattice layer are unevenly distributed in three-dimensional space. The semiconductor structure and the manufacturing method thereof provided by the invention have the effects of improving the hole concentration of the material and improving the longitudinal conductivity of the semiconductor structure.

Description

technical field [0001] The present application relates to the technical field of semiconductor material preparation, in particular, to a semiconductor structure and a manufacturing method thereof. Background technique [0002] AlGaN-based DUV-LED (deep ultraviolet light-emitting diode) is currently the only deep ultraviolet solid-state light source product that can replace mercury lamps. Compared with traditional mercury lamp ultraviolet light sources, it has good portability, full solid state, low energy consumption, long life, and no Pollution and many other advantages, the market prospect is extremely broad. At present, the output power of deep ultraviolet LEDs is relatively low, and one of the main reasons is the low hole concentration of p-type AlGaN. [0003] The p-type AlGaN epitaxy with low hole concentration not only seriously affects hole injection, but also greatly reduces the radiative recombination efficiency of quantum wells. At the same time, the overall res...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/24H01L33/32H01L33/00
CPCH01L33/007H01L33/06H01L33/24H01L33/325
Inventor 张康赵维贺龙飞何晨光吴华龙李成果刘云洲陈志涛
Owner GUANGDONG INST OF SEMICON IND TECH
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