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Boron-containing compound as well as preparation method and application thereof

A boron compound and compound technology, which can be used in chemical instruments and methods, compounds containing elements of Group 3/13 of the periodic table, organic chemistry, etc., and can solve problems such as disparity

Inactive Publication Date: 2020-07-07
JIANGSU SUNERA TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, for the collocation of OLED devices with different structures, the photoelectric functional materials used have strong selectivity, and the performance of the same material in devices with different structures may be completely different.

Method used

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  • Boron-containing compound as well as preparation method and application thereof
  • Boron-containing compound as well as preparation method and application thereof
  • Boron-containing compound as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0109] Embodiment 1: the synthesis of compound H2:

[0110]

[0111]In a 250ml three-neck flask, under the protection of nitrogen, add 0.01mol intermediate G1, 0.012mol tert-butyllithium and 150ml tert-butylbenzene, stir and mix, heat to 60°C, stir and react for 2h; then naturally cool to room temperature, drop Add 0.012molBBr 3 and 0.05mol diisopropylethylamine, stirred and reacted at room temperature for 1h, and the plate was sampled, showing that no intermediate G1 remained, and the reaction was complete; adding water and dichloromethane for extraction and liquid separation; taking the organic phase, adding anhydrous magnesium sulfate Water was removed, filtered, and the filtrate was rotary evaporated under reduced pressure (-0.09MPa, 25°C), and passed through a neutral silica gel column to obtain the target product, with a HPLC purity of 99.1% and a yield of 45.7%;

[0112] Elemental analysis structure (molecular formula C 41 h 41 B 2 NO): Theoretical C, 84.12; H, 7...

Embodiment 2

[0113] Embodiment 2: the synthesis of compound H4:

[0114]

[0115] The preparation method of compound H4 is the same as that of Example 1, except that intermediate G1 is replaced by intermediate G2.

[0116] Elemental analysis structure (molecular formula C 36 h 24 B 2 N 2 ): theoretical value C, 85.42; H, 4.78; B, 4.27; N, 5.53; test value: C, 85.43; H, 4.76; B, 4.28; N, 5.54. ESI-MS(m / z)(M + ): The theoretical value is 506.21, and the measured value is 506.22.

Embodiment 3

[0117] Embodiment 3: the synthesis of compound H13:

[0118]

[0119] In a 250ml three-necked flask, under the protection of nitrogen, add 0.01mol of intermediate G3, 0.024mol of tert-butyllithium and 150ml of tert-butylbenzene, stir and mix, heat to 60°C, stir and react for 2h; then naturally cool to room temperature, drop Add 0.024molBBr 3 and 0.1mol of diisopropylethylamine, stirred and reacted at room temperature for 1h, and the plate was sampled and showed that no intermediate G3 remained, and the reaction was complete; adding water and dichloromethane for extraction and liquid separation; taking the organic phase, adding anhydrous magnesium sulfate Water was removed, filtered, and the filtrate was subjected to vacuum rotary evaporation (-0.09MPa, 25° C.), and passed through a neutral silica gel column to obtain the target product with a HPLC purity of 99.2% and a yield of 41.8%;

[0120] Elemental analysis structure (molecular formula C 30 h 17 B 2 NO 2 ): theore...

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Abstract

The invention discloses a boron-containing compound and application thereof and belongs to the technical field of semiconductors. The compound has the structure that is shown as a general formula (1).The invention further discloses applications of the compound. The compound provided by the invention contains a boron atom structure and has very strong rigidity, so that molecules are not easy to crystallize and aggregate, and the compound has the characteristics of good film-forming property; the compound disclosed by the invention has the characteristics of TADF, and the HOMO energy levels ofthe material are different due to different electron donating capacities of groups, so that the compound can be used as different functional layer materials; in addition, the compound provided by theinvention has high fluorescence quantum efficiency and can effectively generate radiation transition. Therefore, after the compound disclosed by the invention is applied to an OLED device as an organic electroluminescent functional layer material, the current efficiency, the power efficiency and the external quantum efficiency of the device are greatly improved; and meanwhile, the service life ofthe device is obviously prolonged.

Description

technical field [0001] The invention relates to a boron-containing compound, a preparation method thereof and an application thereof, belonging to the technical field of semiconductors. Background technique [0002] Organic electroluminescent (OLED: Organic Light Emission Diodes) device technology can be used to manufacture new display products and also can be used to make new lighting products, which is expected to replace the existing liquid crystal display and fluorescent lighting, and has a wide application prospect. The OLED light-emitting device is like a sandwich structure, including electrode material film layers, and organic functional materials sandwiched between different electrode film layers. Various functional materials are superimposed on each other according to the application to form an OLED light-emitting device. As a current device, when a voltage is applied to the electrodes at both ends of the OLED light-emitting device, and the positive and negative cha...

Claims

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Application Information

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IPC IPC(8): C07F5/02C09K11/06H01L51/50H01L51/54
CPCC07F5/027C09K11/06C09K2211/1007C09K2211/104C09K2211/1033C09K2211/1029C09K2211/1096H10K85/657H10K50/12H10K50/11H10K85/658C07F5/02
Inventor 李崇蔡啸唐丹丹王芳
Owner JIANGSU SUNERA TECH CO LTD
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