Nonvolatile memory and forming method thereof

Abstract

The invention provides a nonvolatile memory and a forming method thereof. A first tip structure is formed on the top surface, close to a word line, of a floating gate to adjust the morphology of the end, close to the word line, of the floating gate, so that the end, close to the word line, of the floating gate is provided with a second tip structure. According to the nonvolatile memory formed based on the structure, when the nonvolatile memory executes the erasing operation, the electric field intensity of the floating gate at the second tip structure can be enhanced, so that electrons in thefloating gate can penetrate into a word line more favorably, and the erasing efficiency of the memory is effectively improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a nonvolatile memory and a forming method thereof. Background technique [0002] Driven by application requirements, non-volatile memory (Non-Volatile Memory, NVM) develops rapidly. In various non-volatile memory products, it is capable of multiple data storage, reading, erasing, etc., and has become a memory element widely used in personal computers and electronic equipment. Generally, a floating gate is provided in a non-volatile memory, and the coupling ratio (coupling ratio, CR) between the floating gate and other components will directly affect the coupling to the floating gate. The size of the coupling voltage on the upper, and then will affect the operating efficiency of the non-volatile memory. [0003] For example, Figure 1a is a schematic structural diagram of an existing non-volatile memory, Figure 1a The nonvolatile memory shown includes a floating gate, a ...

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Problems solved by technology

[0013] The purpose of the present invention is to provide a non-volatile memory to solve the problem of low erasing efficiency in the existing non-volatile memory

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