High-selectivity array MOS sensor and preparation method thereof

A high-selectivity, sensor technology, applied in instruments, scientific instruments, measuring devices, etc., can solve the problems of inability to effectively reflect the real situation of the gas, poor specificity of MOS sensors, detection errors, etc., to achieve a balanced heat distribution and achieve high sensitivity response , the effect of reducing heat loss

Pending Publication Date: 2020-07-10
AEROSPACE INFORMATION RES INST CAS
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Problems solved by technology

[0004] However, the existing metal oxide semiconductor (MOS, metal oxide semiconductor), due to the limitations of the design concept and sensitive materials, makes the specificity of the MOS sensor very poor. Gas component response, which is extremely easy to cause detection errors or even errors, so that it cannot effectively reflect the real situation of the gas in the environment

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  • High-selectivity array MOS sensor and preparation method thereof
  • High-selectivity array MOS sensor and preparation method thereof
  • High-selectivity array MOS sensor and preparation method thereof

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Embodiment Construction

[0035] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0036] As an aspect of the present invention, such as figure 1 As shown, a highly selective array MOS sensor is provided, including: a substrate 4, a plurality of sensitive units 3, a heater 2 and an electrode layer 1; wherein a plurality of sensitive units 3 are formed on the substrate 4, and a plurality of sensitive units 3 are formed Array structure; heater 2 is formed on the substrate 4, and the heater 2 is located at the periphery of the sensitive unit 3; the electrode layer 1 is formed on the substrate 4, and the electrode layer 1 is electrically connected to the sensitive unit 3 and the heater 2, wherein the electrode Layer 1 includes a plurality of lead-out terminals for monitoring the terminal potentials of diffe...

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Abstract

The invention discloses a high-selectivity array MOS sensor and a preparation method thereof. The high-selectivity array MOS sensor comprises a substrate; a plurality of sensitive units which are formed on the substrate, wherein a plurality of sensitive units form an array structure; a heater which is formed on the substrate and at the periphery of the sensitive units; an electrode layer which isformed on the substrate and is electrically connected with the sensitive units and the heater, wherein the electrode layer comprises a plurality of leading-out terminals and is used for monitoring terminal potentials of different sensitive unit combinations. A plurality of sensitive units with array structures and a plurality of leading-out terminals of the electrode layer are adopted to form a connecting circuit with different sensitive unit combinations so that high-sensitivity response of different gases can be realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor sensors, in particular to a highly selective array MOS sensor and a preparation method thereof. Background technique [0002] With the development of industry and urban transportation, a large number of toxic and harmful gases released from industrial parks, industrial boilers, automobile exhaust, furniture and building materials make our living environment full of a large amount of toxic gases (mainly CO, CO 2 , SO 2 , NO 2 、H 2 S, formaldehyde, etc.), how to realize its effective control, the primary key issue is to solve the high-precision, high-sensitivity and rapid detection of its pollution sources. Therefore, a large number of high-sensitivity and high-precision sensors are urgently needed to realize on-site analysis or on-line monitoring. [0003] The metal oxide detector is a very important and widely used detector. Because of its low price and wide range of gas detection (the c...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12
CPCG01N27/127G01N27/128
Inventor 孙建海陈婷婷赵佩月
Owner AEROSPACE INFORMATION RES INST CAS
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