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Systems and methods for predicting layer deformation

A deformation model and resist technology, applied in the deformation field of patterned layers, can solve problems such as difficulties

Active Publication Date: 2020-07-17
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In general, the smaller k1 becomes, the more difficult it becomes to reproduce a pattern on the substrate that resembles the shape and dimensions planned by the circuit designer in order to achieve specific electrical functionality and performance

Method used

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  • Systems and methods for predicting layer deformation
  • Systems and methods for predicting layer deformation
  • Systems and methods for predicting layer deformation

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Embodiment Construction

[0036] As the background art of the embodiment and turning to figure 1 , illustrates an exemplary and highly schematic lithographic projection apparatus 10A. The main components are the radiation source 12A, which may be a deep ultraviolet excimer laser source or other types of sources including extreme ultraviolet (EUV) sources; the illumination optics, which define partial coherence (denoted as σ) and may include pair Radiation shaping optics 14A, 16Aa, and 16Ab from source 12A; a support configured to hold patterning device 18A; and projection optics 16Ac that project an image of the pattern of the patterning device onto substrate plane 22A superior. An adjustable filter or aperture 20A at the pupil plane of the projection optics can constrain the range of beam angles impinging on the substrate plane 22A, where the largest possible angle defines the numerical aperture of the projection optics NA=sin( Θmax). In an embodiment, the lithographic projection apparatus need not...

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Abstract

A method, involving obtaining a resist deformation model for simulating a deformation process of a pattern in resist, the resist deformation model being a fluid dynamics model configured to simulate an intrafluid force acting on the resist; performing, using the resist deformation model, a computer simulation of the deformation process to obtain a deformation of the developed resist pattern for aninput pattern to the resist deformation model; and producing electronic data representing the deformation of the developed resist pattern for the input pattern.

Description

[0001] Cross References to Related Applications [0002] This application claims the priority of European application 17205139.3 filed on December 4, 2017 and European application 18208989.6 filed on November 28, 2018. These two European applications are hereby incorporated by reference in their entirety. technical field [0003] The description herein relates to processes relating to forming patterns on substrates, and more particularly to methods of determining deformation of patterned layers on substrates. Background technique [0004] A lithographic apparatus may be used to fabricate, for example, integrated circuits (ICs) or other devices. In this case, the patterning device (e.g., a mask) may contain or provide a pattern that corresponds to a single layer of the device (the "design layout"), and this pattern may be manipulated, such as via A method of irradiating a target portion with a pattern is transferred to a target portion (eg, comprising one or more dies) on a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
CPCG03F7/705G03F7/70608G06F30/28G06F2119/14
Inventor C·巴蒂斯塔奇斯S·A·米德尔布鲁克斯S·F·伍伊斯特
Owner ASML NETHERLANDS BV